MXSMCG130AE3 Circuit Protection |
|
| Allicdata Part #: | 1086-14240-ND |
| Manufacturer Part#: |
MXSMCG130AE3 |
| Price: | $ 12.66 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 130V 209V DO215AB |
| More Detail: | N/A |
| DataSheet: | MXSMCG130AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 11.51000 |
| Voltage - Clamping (Max) @ Ipp: | 209V |
| Supplier Device Package: | SMCG (DO-215AB) |
| Package / Case: | DO-215AB, SMC Gull Wing |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 7.2A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 144V |
| Voltage - Reverse Standoff (Typ): | 130V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS-diodes are semiconductor devices used for protecting electronic circuits from damage caused by electrostatic discharge. The MXSMCG130AE3 is a silicon carbide (SiC) p-type MOSFET-based MOS varistor which offers high energy absorption and low clamping voltage when connected in parallel with the line.
The MXSMCG130AE3 is designed to protect circuits with DC or AC voltage, high surge pulses, and is ideal for applications such as point-of-load circuits protection, data line protection, protection of automotive electronic engine control units, and Internet of Things products. The varistor is also suitable for applications that require ultra-low clamping voltage.
The MXSMCG130AE3 has a multilayer construction, with each layer consisting of three SiC MOSVaristors and connected in series. This provides high energy absorption and protection against transients with rise times as low as 7ns. It can handle current pulses up to 250A and can survive a voltage up to 6.4kV.
The working principle of the MXSMCG130AE3 is that when a transient voltage is applied to it, the voltage across the MOS varistor is sensed by the surrounding MOSFETs. This causes the voltage to be limited, and the transient voltage is then discharged without damaging the system.
The SiC MOSVaristor technology is key to the MXSMCG130AE3’s optimized performance: the SiC MOSVaristor creates a constant voltage drop at its terminals, which regulates the transient overvoltage and limits its peak amplitude.
The MXSMCG130AE3 also has high ESD discharge capability. It is capable of supporting up to 6kV of electrostatic discharge current which can be applied to either terminal. This makes the device suitable for applications such as automotive ECU protection, and industrial DC power line protection.
Overall, the MXSMCG130AE3 is a versatile, high-performance transient voltage suppressor capable of protecting circuits from voltage transients and electrostatic discharges. Its multilayer construction and SiC MOSVaristor technology allow it to absorb high surge pulses without causing damage to the underlying system.
The specific data is subject to PDF, and the above content is for reference
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MXSMCG130AE3 Datasheet/PDF