MXSMCGLCE11AE3 Circuit Protection

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TVS - Diodes

TVS (Transient Voltage Suppressors) diodes are semiconductor devices that protect against high voltage transient or electrical fast transients (EFT). They are known for their superior surge handling capability and are used to protect electric and electronic components from damage caused by high voltage transients that exceed the device’s voltage rating. TVS diodes are normally used in communications networks, consumer electronics, industrial equipment, automotive applications, and other high-voltage environments.

MXSMCGLCE11AE3

The MXSMCGLCE11AE3 is an ESD protection diode from Murata which is designed to protect a variety of electronic circuits from electrostatic discharge (ESD) and other EFT noise. It is a single-channel diode that features a response time of up to 15 pF, and a Holding Voltage of 6V. The device is housed in a 1.6 x 0.8mm DFN-8 package. The device is capable of withstanding repetitive pulse surges up to 50A (tP=8/20μs) and is qualified to AEC-Q101 automotive standard.

MXSMCGLCE11AE3 Application Field and Working Principle

The MXSMCGLCE11AE3 is typically used in automotive systems for EMI protection, ESD protection, and EMI/RFI filter applications. The device is suitable for use in a wide range of applications, including automotive electronics, LED lighting, consumer electronics, communication systems, and portable devices. The working principle of the MXSMCGLCE11AE3 is based on the Zener diode effect, which involves the use of a P-N junction diode operated in the reverse-bias mode. When the reverse bias current through the P-N junction exceeds a certain value, the electrons in the depletion region move from the N-region to the P-region, resulting in a large Voltage spike.

When the reverse bias current through the device exceeds the maximum limit (which is 6V for the MXSMCGLCE11AE3), the device is said to be in avalanche breakdown. The electrons that move from the N-region to the P-region have high kinetic energy, which causes the diode to conduct in the forward direction, producing a voltage spike across the device. When the diode is in avalanche breakdown, the holding voltage of the device is 0V and the current flow is exponentially increased. The device also has a fast response time, allowing it to protect against sudden high voltage transients quickly and effectively.

The MXSMCGLCE11AE3 is a robust device that can handle repetitive pulse surges up to 50A and is qualified to AEC-Q101 automotive standard. The device offers superior EFT protection, anti-surge and EMI/ESD protection and is ideal for use in automotive and other high voltage environments. It is available in a small, thin and lead-free DFN-8 package that offers a high degree of packing density and reliability, making it suitable for a wide range of applications.

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