MXSMCGLCE120AE3 Allicdata Electronics

MXSMCGLCE120AE3 Circuit Protection

Allicdata Part #:

1086-14408-ND

Manufacturer Part#:

MXSMCGLCE120AE3

Price: $ 12.27
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 120V 193V DO215AB
More Detail: N/A
DataSheet: MXSMCGLCE120AE3 datasheetMXSMCGLCE120AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.15740
Stock 1000Can Ship Immediately
$ 12.27
Specifications
Voltage - Clamping (Max) @ Ipp: 193V
Supplier Device Package: SMCG (DO-215AB)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 7.8A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 133V
Voltage - Reverse Standoff (Typ): 120V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Transient Voltage Suppressors (TVS) are a form of protection device designed to protect electrical or electronic components from overvoltage. TVS diodes form a part of this protection technology and provide protection from high voltage transients in both AC and DC applications. The MXSMCGLCE120AE3 is a special purpose TVS diode that is designed to provide protection from high eletrostatic discharge (ESD) events.

The MXSMCGLCE120AE3 is a robust three-phase bidirectional ESD protection device with a working voltage of up to 120V. It features low leakage current and high ESD protection performance. Its ESD robustness features make it suitable for use in industrial, automotive, telecom, consumer & computer applications. The operating temperature range of the device is -40°C to +125°C, and it comes in a small surface mount package.

The working principle of the MXSMCGLCE120AE3 is based on a suppression principle which is dependent on the breakdown voltage of the diode. When an ESD event occurs, the current flowing through the semiconductor layer of the diode leads to a voltage increase in the diode junction, and this voltage increase eventually causes the p-n junction of the diode to break down. This breakdown of the junction prevents the current from causing additional damage to other components or the device itself.

The MXSMCGLCE120AE3 provides superior protection from ESD of 8kV and even higher in the human body model testing environment.It also has impressive performance for some other common ESD tests such as machine model, triple pulse and dipole discharge. The diode is designed to be used in ESD sensitive systems either as single line protection or in line protection, which provides increased ESD performance and reliability.

The MXSMCGLCE120AE3 is an ideal choice for providing ESD protection in a variety of industrial, consumer, automotive and telecom applications. Its features such as low leakage current, high surge capability, and broad operating tempatures make it an ideal candidate for providing necessary protection from ESD events.It is also RoHS compliant and has a maximum lead time of 10 weeks.

The specific data is subject to PDF, and the above content is for reference

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