MXSMCGLCE64AE3 Circuit Protection |
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| Allicdata Part #: | 1086-14466-ND |
| Manufacturer Part#: |
MXSMCGLCE64AE3 |
| Price: | $ 12.27 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 64V 103V DO215AB |
| More Detail: | N/A |
| DataSheet: | MXSMCGLCE64AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 11.15740 |
| Voltage - Clamping (Max) @ Ipp: | 103V |
| Supplier Device Package: | SMCG (DO-215AB) |
| Package / Case: | DO-215AB, SMC Gull Wing |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | 90pF @ 1MHz |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 14.6A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 71.1V |
| Voltage - Reverse Standoff (Typ): | 64V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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The MXSMCGLCE64AE3TVS-Diodes is commonly used in data and signal lines protection applications. This component is a low capacitance, bidirectional two-line (dual-line) device that designed for protecting two high-speed data lines from voltage transients induced by electrostatic discharge (ESD). Transient voltage suppression diode, commonly known as TVS diodes, must be able to safely dissipate large voltage spikes and protect a component from damage.
The MXSMCGLCE64AE3 is a small form factor TVS-Diodes, measuring just 7.6 mm x 4.9 mm, with a low clamping voltage of 15.2 volts. It works on higher-frequency signals up to 5Ghz and provides an operating temperature range between -55°C and +150°C. Its fast surge response time of less than 1.0 ns ensures protection is quick and efficient with no signal degradation, and its low leakage current keeps emitted radiation to a minimum.
The MXSMCGLCE64AE3 is designed with a symmetric dual-line architecture, which provides a low profile for the device, while still providing full-wave protection on different voltage levels on both lines. Each line is rated for a maximum breakdown voltage of 130 volts, while the total mirror-image breakdown voltage between the two lines is rated at a maximum of 169 volts. This device is surge rated for up to 32 amps, with a maximum peak pulse current of 60 amps single line.
The MXSMCGLCE64AE3 working principle is based on the metal-oxide semiconductor field-effect transistor (MOSFET) technology, which is extremely sensitive to shift in voltage. During a transient event such as ESD, the high potential causes the device to initiate the avalanche breakdown process, which introduces current into the circuit, reducing and limiting the voltage to an allowed level to protect the circuit from damage. The device has a low clamping voltage, which allows for very low loss energy dissipation. Additionally, the Zener-based protection on the dual lines provides a wide dynamic range for power regulation.
The MXSMCGLCE64AE3 TVS-Diodes provides an efficient and robust way for protecting high-speed data lines against transient voltage events while keeping caps on power consumption. This device can be deployed in a wide range of applications, such as telecommunications, networking, data storage, consumer electronics, automotive, and any system that requires fast, reliable voltage protection.
The specific data is subject to PDF, and the above content is for reference
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MXSMCGLCE64AE3 Datasheet/PDF