MXSMCJ120AE3 Circuit Protection

Voltage - Clamping (Max) @ Ipp:	193V
Supplier Device Package:	DO-214AB (SMCJ)
Package / Case:	DO-214AB, SMC
Mounting Type:	Surface Mount
Operating Temperature:	-65°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	1500W (1.5kW)
Current - Peak Pulse (10/1000µs):	7.8A
Series:	Military, MIL-PRF-19500
Voltage - Breakdown (Min):	133V
Voltage - Reverse Standoff (Typ):	120V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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Introduction to MXSMCJ120AE3 TVS Diode

MXSMCJ120AE3 is a TVS diode device designed and manufactured by Littelfuse. The device is mainly used in electronic circuits to provide transient overvoltage protection. The MXSMCJ120AE3 is characterized by its low leakage current, low capacitance, low dynamic resistance, and low clamping voltage.

Application Field of MXSMCJ120AE3 TVS Diode

The MXSMCJ120AE3 TVS diode is suitable for a wide variety of applications, including data communications, computing, electronic equipment, and consumer electronics products. It can also be used in automotive and industrial electronics, such as automotive electrical systems, medical instrumentation, and industrial equipment. The device is designed to protect sensitive electronic components from transient overvoltage caused by electrostatic discharge (ESD), electrical fast transients (EFT), and other high-energy transients.

Working Principle of MXSMCJ120AE3 TVS Diode

The working principle of the MXSMCJ120AE3 TVS diode is based on the “avalanche breakdown” mechanism. When the applied overvoltage exceeds the device’s breakdown voltage, electrons are injected from the emitter region into the base region. In the base region, the electron transitions undergo avalanche multiplication, producing a large current flow. This current flow is limited by the device’s internal P-N junction, which is designed to clamp the voltage at a safe level, protecting the sensitive electronic components from excessive voltage.The MXSMCJ120AE3 device has a breakdown voltage of 120 V, a clamping voltage of 184 V, a dynamic resistance of 9.3 Ω, and a leakage current of 0.2 μA. The device is also designed to provide fast response times, reducing the effects of transients on the protected circuit.

Conclusion

The MXSMCJ120AE3 TVS diode is a robust transient voltage suppressor that provides effective overvoltage protection for a wide range of electronic products. The device has a low leakage current, low capacitance, low dynamic resistance, and low clamping voltage, and can protect sensitive components from transient overvoltage caused by ESD, EFT, and other high-energy transients. The device is easy to use and can provide fast response times when used in an appropriately designed circuit.

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