MXSMCJ160AE3 Allicdata Electronics

MXSMCJ160AE3 Circuit Protection

Allicdata Part #:

1086-14530-ND

Manufacturer Part#:

MXSMCJ160AE3

Price: $ 12.36
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 160V 259V DO214AB
More Detail: N/A
DataSheet: MXSMCJ160AE3 datasheetMXSMCJ160AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.23910
Stock 1000Can Ship Immediately
$ 12.36
Specifications
Voltage - Clamping (Max) @ Ipp: 259V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 5.8A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 178V
Voltage - Reverse Standoff (Typ): 160V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes are a form of protective devices that can be used to protect circuits from high voltage and electrical surges. The MXSMCJ160AE3 is one such device that is commonly used in many applications. In this article, we will look at the application field and the working principle of the MXSMCJ160AE3.

The MXSMCJ160AE3 is designed to provide solutions for ESD (Electrostatic Discharge) and Surge protection in a variety of low power/high sensed application fields. It is a bi-directional device that conforms to the highest level of ESD protection level according to the IEC 61000-4-2 standard. This makes it perfect for use in applications such as portable electronic products, communication equipment, home appliances, automotive electronics, and industrial equipment.

The MXSMCJ160AE3 is composed of three components: a dielectric layer, an anode and a cathode. In a normal state, the dielectric layer provides an electrical barrier between the anode and the cathode, preventing the flow of current through. However, in an abnormal state (such as when an ESD or surge occurs), the dielectric layer will be broken down, allowing a large amount of current to flow from the anode to the cathode, thus protecting the circuit.

The working principle of the MXSMCJ160AE3 is quite simple. When subjected to an ESD or surge in excess of the device’s specified breakdown voltage, the dielectric layer will break down, allowing a large amount of current to flow from the anode to the cathode. This current will then be dissipated in the form of heat, thus protecting the circuit. Furthermore, due to the low clamping voltage of the MXSMCJ160AE3, the circuit is effectively protected.

In addition to its ESD and surge protection, the MXSMCJ160AE3 also has numerous other uses. It can be used in applications such as power reclamers, charge holding devices, and as a replacement for MOVs (Metal Oxide Varistors). It can also be used as a secondary protection device against overvoltage, as well as in automotive and industrial environments, where it can serve as a protection against load dump transients.

As seen, the MXSMCJ160AE3 is a very versatile device and is widely used in many applications due to its exceptional protection capabilities. Its simple working principle and low clamping voltage make it perfect for a variety of applications. It is also an inexpensive device and is very reliable, making it a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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