MXSMCJ33AE3 Allicdata Electronics

MXSMCJ33AE3 Circuit Protection

Allicdata Part #:

1086-14574-ND

Manufacturer Part#:

MXSMCJ33AE3

Price: $ 12.36
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 33V 53.3V DO214AB
More Detail: N/A
DataSheet: MXSMCJ33AE3 datasheetMXSMCJ33AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.23910
Stock 1000Can Ship Immediately
$ 12.36
Specifications
Voltage - Clamping (Max) @ Ipp: 53.3V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 28.1A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 36.7V
Voltage - Reverse Standoff (Typ): 33V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The MXSMCJ33AE3 is a part of TE Connectivity\'s Transient Voltage Suppressor (TVS) Diode range. It is designed to protect semiconductor components from high voltage transients such as electrostatic discharge (ESD). It is a 3-pin device with a low capacitance junction which is capable of suppressing transient voltages up to 800W peak pulse power dissipation.

The device is constructed from a specially doped diode junction which is designed to have an reverse breakdown voltage of 33V. When a sufficiently high voltage transient is applied across the device, the diode will switch to its low-impedance state and the voltage across it will sharply drop to a few volts above ground. This is known as the avalanche breakdown voltage, and it is at this point that the device begins to effectively suppress any further voltage transients.

The device\'s working principle is that of a bidirectional, voltage-dependent switch. When a transient voltage spike is applied to the device, the diode junction will become highly conductive, allowing current to flow through it in both directions and dissipating the energy of the transient, thereby protecting the components from the damaging effects of high voltage transients. The current flow is limited to a predetermined safe level by the characteristics of the diode, so that any further voltage transients will be suppressed before they can cause any damage to the circuit or the components.

The MXSMCJ33AE3 is used in a variety of applications, including power supplies, automotive electronics, telecom systems, and consumer products. It is widely used for protection against high voltage transients, ESD protection, and input overvoltage protection. It can also be used in surge protection, overvoltage protection, and reverse surge protection for general purpose applications. Additionally, it is used for transceiver protection in digital communication systems, such as Ethernet and USB.

In summary, the MXSMCJ33AE3 is a 3-pin Transient Voltage Suppressor diode which is designed for high voltage transient protection. It is a bidirectional, voltage-dependent switch which is capable of suppressing transient voltages up to 800W peak pulse power dissipation. The device is widely used for a variety of applications, such as power supplies, telecom systems, and consumer products, as well as for transceiver protection in digital communication systems. It is an essential element in protecting sensitive components from the damage that can be caused by high voltage transients.

The specific data is subject to PDF, and the above content is for reference

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