MXSMCJ64AE3 Circuit Protection |
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| Allicdata Part #: | 1086-14626-ND |
| Manufacturer Part#: |
MXSMCJ64AE3 |
| Price: | $ 12.36 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 64V 103V DO214AB |
| More Detail: | N/A |
| DataSheet: | MXSMCJ64AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 11.23910 |
| Voltage - Clamping (Max) @ Ipp: | 103V |
| Supplier Device Package: | DO-214AB (SMCJ) |
| Package / Case: | DO-214AB, SMC |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 14.6A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 71.1V |
| Voltage - Reverse Standoff (Typ): | 64V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS Diodes are well-suited for applications in which sensitive electronics need to be protected from static electricity, transient voltage phenomena, and inductive load switching. This is because the TVS Diode can provide a low resistance path for current to flow which is not limited by the internal resistance of the circuit. The MXSMCJ64AE3 is one such device which has anodal and cathodal breakdown voltages of 600V and 500V respectively. The device can also withstand maximum surge current of 48A (8/20μs pulse width), thus providing up to 44.8 kW of peak power dissipation.
The MXSMCJ64AE3 is a unidirectional diode, meaning that it only allows current flow in one direction. This is because of the N-Channel junction which is present in the diode. This junction allows the current to flow between the gate and the source of the device when a positive potential is applied to the gate. Once this positive potential is applied, the N-Channel junction will be driven into the saturation region allowing current to flow through the device and providing an effective low-impedance path. This low-impedance path will be maintained until the diode is biased down or reversed.
The MXSMCJ64AE3 is a bidirectional transient voltage suppressor, meaning that it can provide protection in both directions. The device has a breakover voltage of 500V, which is the point at which the breakdown characteristics of the device will occur. When a voltage higher than 500V is applied to the device, the diode will become forward-biased and a low-impedance path will be established, allowing the current to flow. At this point, the device will begin to absorb the transient surge, protecting the sensitive electronics from the voltagespike. When the voltage returns to a low level, the diode will automatically stop the current flow and reset itself.
The device also provides protection from inductive loads switching. This is because, as the name implies, inductive loads can cause sudden voltage spikes which could cause damage to sensitive electronics. The MXSMCJ64AE3 has a peak power dissipation of 44.8 kW, which means that it can safely absorb these spikes without damaging itself. This is in addition to its ability to absorb and dissipate up to 48A of current.
In summary, the MXSMCJ64AE3 is a unidirectional and bidirectional transient voltage suppressor which is ideal for applications which require protection from static electricity, transient voltage phenomena, and inductive load switching. The device has an anodal and cathodal breakdown voltage of 600V and 500V respectively, and a peak power dissipation of 44.8 kW. In addition to this, the device is capable of absorbing up to 48A of surge current. This makes it one of the most reliable and versatile TVS Diodes available on the market today.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| MXSMLJ120AE3 | Microsemi Co... | 12.82 $ | 1000 | TVS DIODE 120V 193V DO214... |
| MXSMLJ16A | Microsemi Co... | 12.82 $ | 1000 | TVS DIODE 16V 26V DO214AB |
| MXSMCJLCE24AE3 | Microsemi Co... | 12.91 $ | 1000 | TVS DIODE 24V 38.9V DO214... |
| MXSMBG70CA | Microsemi Co... | 16.41 $ | 1000 | TVS DIODE 70V 113V DO215A... |
| MXSMBJ14CA | Microsemi Co... | 16.93 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
| MXSMBJ16CAE3 | Microsemi Co... | 16.93 $ | 1000 | TVS DIODE 16V 26V DO214AA |
| MXSMBG15A | Microsemi Co... | 17.12 $ | 1000 | TVS DIODE 15V 24.4V DO215... |
| MXSMBG26AE3 | Microsemi Co... | 17.12 $ | 1000 | TVS DIODE 26V 42.1V DO215... |
| MXSMCJ70CAE3 | Microsemi Co... | 12.12 $ | 1000 | TVS DIODE 70V 113V DO214A... |
| MXSMCGLCE24AE3 | Microsemi Co... | 12.27 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
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| MXSMLJ85CAE3 | Microsemi Co... | 12.48 $ | 1000 | TVS DIODE 85V 137V DO214A... |
| MXSMCG36A | Microsemi Co... | 12.66 $ | 1000 | TVS DIODE 36V 58.1V DO215... |
| MXSMCG51A | Microsemi Co... | 12.66 $ | 1000 | TVS DIODE 51V 82.4V DO215... |
| MXSMBJSAC7.0 | Microsemi Co... | 13.61 $ | 1000 | TVS DIODE 7V 12.6V DO214A... |
| MXSMBJ28A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 28V 45.4V DO214... |
| MXSMBJ7.5A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MXSMBJ13CAE3 | Microsemi Co... | 16.93 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
| MXSMBG24AE3 | Microsemi Co... | 17.12 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
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MXSMCJ64AE3 Datasheet/PDF