MXSMCJ64AE3 Allicdata Electronics

MXSMCJ64AE3 Circuit Protection

Allicdata Part #:

1086-14626-ND

Manufacturer Part#:

MXSMCJ64AE3

Price: $ 12.36
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 64V 103V DO214AB
More Detail: N/A
DataSheet: MXSMCJ64AE3 datasheetMXSMCJ64AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.23910
Stock 1000Can Ship Immediately
$ 12.36
Specifications
Voltage - Clamping (Max) @ Ipp: 103V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 14.6A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 71.1V
Voltage - Reverse Standoff (Typ): 64V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS Diodes are well-suited for applications in which sensitive electronics need to be protected from static electricity, transient voltage phenomena, and inductive load switching. This is because the TVS Diode can provide a low resistance path for current to flow which is not limited by the internal resistance of the circuit. The MXSMCJ64AE3 is one such device which has anodal and cathodal breakdown voltages of 600V and 500V respectively. The device can also withstand maximum surge current of 48A (8/20μs pulse width), thus providing up to 44.8 kW of peak power dissipation.

The MXSMCJ64AE3 is a unidirectional diode, meaning that it only allows current flow in one direction. This is because of the N-Channel junction which is present in the diode. This junction allows the current to flow between the gate and the source of the device when a positive potential is applied to the gate. Once this positive potential is applied, the N-Channel junction will be driven into the saturation region allowing current to flow through the device and providing an effective low-impedance path. This low-impedance path will be maintained until the diode is biased down or reversed.

The MXSMCJ64AE3 is a bidirectional transient voltage suppressor, meaning that it can provide protection in both directions. The device has a breakover voltage of 500V, which is the point at which the breakdown characteristics of the device will occur. When a voltage higher than 500V is applied to the device, the diode will become forward-biased and a low-impedance path will be established, allowing the current to flow. At this point, the device will begin to absorb the transient surge, protecting the sensitive electronics from the voltagespike. When the voltage returns to a low level, the diode will automatically stop the current flow and reset itself.

The device also provides protection from inductive loads switching. This is because, as the name implies, inductive loads can cause sudden voltage spikes which could cause damage to sensitive electronics. The MXSMCJ64AE3 has a peak power dissipation of 44.8 kW, which means that it can safely absorb these spikes without damaging itself. This is in addition to its ability to absorb and dissipate up to 48A of current.

In summary, the MXSMCJ64AE3 is a unidirectional and bidirectional transient voltage suppressor which is ideal for applications which require protection from static electricity, transient voltage phenomena, and inductive load switching. The device has an anodal and cathodal breakdown voltage of 600V and 500V respectively, and a peak power dissipation of 44.8 kW. In addition to this, the device is capable of absorbing up to 48A of surge current. This makes it one of the most reliable and versatile TVS Diodes available on the market today.

The specific data is subject to PDF, and the above content is for reference

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