MXSMCJ70AE3 Allicdata Electronics

MXSMCJ70AE3 Circuit Protection

Allicdata Part #:

1086-14638-ND

Manufacturer Part#:

MXSMCJ70AE3

Price: $ 12.36
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 70V 113V DO214AB
More Detail: N/A
DataSheet: MXSMCJ70AE3 datasheetMXSMCJ70AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.23910
Stock 1000Can Ship Immediately
$ 12.36
Specifications
Voltage - Clamping (Max) @ Ipp: 113V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 13.3A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 77.8V
Voltage - Reverse Standoff (Typ): 70V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (transient voltage suppressor) diodes are used for protecting electrical and electronic circuits from voltage spikes. These diodes are connected to an electrical circuit in a manner so that the electrical circuit is protected, in the event of a surge or spike. The MXSMCJ70AE3 is a TVS diode used in applications to protect against overvoltage, undervoltage, and electromagnetic interference (EMI).

The MXSMCJ70AE3 is a bidirectional unidirectional diode designed for overvoltage and undervoltage protection. It is rated with a maximum peak power of 30 W. The device has a breakdown voltage range from 7.5 to 202.5 volts and a maximum clamping voltage of 260 volts, allowing it to protect electronic circuits from large voltage surges or spikes. The device also has a second line protection feature, which allows it to protect against both overvoltage and undervoltage. The MXSMCJ70AE3 is fully ESD protected and is capable of withstanding up to 15kV of ESD. It is designed on a SOIC package.

The working principle of a TVS diode is based on the Zener effect. This effect allows the diode to avalanche, when the voltage applied to the diode is above the breakdown voltage. When the voltage is applied, the diode will avalanche and become an open circuit, thereby allowing the voltage spike to be dissipated across the diode. The device will then remain in this state until the voltage spike is removed and the diode returns to its normal state.

The MXSMCJ70AE3 can be used in a variety of applications. It can be used to protect electrical and electronic circuits from voltage spikes. In addition to this, the device can be used for overvoltage, undervoltage, and EMI protection. The device can be used in automotive systems, telecommunications, industrial, and consumer electronics applications. The device is also suitable for use in power management circuits such as switching regulators, or where inrush current must be limited. The device can also be used for EMI suppression in telecom circuits and protection circuits for power amplifiers.

The MXSMCJ70AE3 is a very versatile TVS diode designed for overvoltage and undervoltage protection. The device has a breakdown voltage range from 7.5 to 202.5 volts and a maximum clamping voltage of 260 volts, allowing it to protect against large voltage surges or spikes. The device has a second line protection feature which allows it to protect against both overvoltage and undervoltage, and is ESD protected up to 15kV. The device can be used in a variety of applications such as automotive systems, telecommunications, industrial, and consumer electronics, as well as power management circuits and EMI suppression. The device is designed on a SOIC package.

The specific data is subject to PDF, and the above content is for reference

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