MXSMCJLCE51AE3 Allicdata Electronics

MXSMCJLCE51AE3 Circuit Protection

Allicdata Part #:

1086-14726-ND

Manufacturer Part#:

MXSMCJLCE51AE3

Price: $ 12.91
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 51V 82.4V DO214AB
More Detail: N/A
DataSheet: MXSMCJLCE51AE3 datasheetMXSMCJLCE51AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.73390
Stock 1000Can Ship Immediately
$ 12.91
Specifications
Voltage - Clamping (Max) @ Ipp: 82.4V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 18.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 56.7V
Voltage - Reverse Standoff (Typ): 51V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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A Transient Voltage Suppression Diode (TVS) is a device that helps protect electronic systems from electrical overstress (EOS). These devices are designed to dissipate large amounts of energy in the event of a voltage surge, thus protecting the systems from damage. The MXSMCJLCE51AE3 is a particular type of TVS device that is popular among electronics engineers for its effective protection, performance, and reliability. This article will explain the application field and working principles of the MXSMCJLCE51AE3.

The MXSMCJLCE51AE3 is a unidirectional TVS diode, designed for protection against EOS events such as electrostatic discharge (ESD). It is compliant with the JESD22-A114F standard from the Joint Electron Device Engineering Council (JEDEC). The device has a breakdown voltage of 5.1V, an 18pF typical capacitance, and an average clamping voltage of 18V.

The MXSMCJLCE51AE3 is designed for use in a variety of applications, including telecommunications, video, audio, and data equipment. The device can also be used in automotive, medical, computer, and consumer electronics. The diode is highly reliable, with an ESD stress withstand voltage (IEC 61000-4-2, Level 4) of 8kV and an EFT surge current (IEC 61000-4-4) rating of 8A. The device also has high surge capability, with a 9A surge current rating at 12V.

The MXSMCJLCE51AE3 works by clamping down the voltage when it reaches the diode\'s breakdown voltage. The diode acts as a short circuit to ground, dissipating the energy and preventing the EOS event from damaging the equipment. Since the voltage is clamped down rather than shunted away, only a minimal amount of power is lost. This helps to ensure that the equipment is not damaged by the EOS event and that the environment remains safe.

The MXSMCJLCE51AE3 is an ideal TVS diode for use in a variety of applications, providing effective protection for the equipment from EOS events. Its reliability and high surge capability make it a popular choice for electronics engineers. By understanding the application field and working principles of the MXSMCJLCE51AE3, users can be sure that they have the right TVS diode for their particular application.

The specific data is subject to PDF, and the above content is for reference

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