MXSMCJLCE54A Allicdata Electronics

MXSMCJLCE54A Circuit Protection

Allicdata Part #:

1086-14727-ND

Manufacturer Part#:

MXSMCJLCE54A

Price: $ 12.91
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 54V 87.1V DO214AB
More Detail: N/A
DataSheet: MXSMCJLCE54A datasheetMXSMCJLCE54A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.73390
Stock 1000Can Ship Immediately
$ 12.91
Specifications
Voltage - Clamping (Max) @ Ipp: 87.1V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 17.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 60V
Voltage - Reverse Standoff (Typ): 54V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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A TVS – Diodes, MXSMCJLCE54A, uses a reverse breakdown voltage shock method to protect sensitive circuit components from such pulse events. This product line is a unidirectional diode with excellent clamping characteristics and protection from electrical transients of up to 66V. Its reverse breakdown voltage is 54 volts (54V).

The applications of this diode extend to protecting a host of loads including those connected to automotive, audio, and telecom systems. Having the capability to handle higher surge voltages than competitor parts, MXSMCJLCE54A boasts superior protection for the components it shields. And, no rated capacitance, fast response time, and UL certification to UL1449 4th edition (UL File #E-33269) enhances its appeal to design engineers.

Working principle of the diode is that when an external transient overvoltage that is greater than the breakdown voltage, V (BR) is applied to the diode, an avalanche phenomenon occurs. This phenomenon is the creation of an afflux of electrons which pass through the P-N junction, giving rise to the current specified by the IDF (Infinite Discharge Flow). This current rapidly discharges the over-voltage that has been transmitted to the diode. This offers the targeted circuit components full protection against such transient voltages.

This diode is made using an epitaxial structure to ensure excellent performance under different current and temperature conditions. A zener diode is aslo integrated into the product to permit steady current operation under varying temperature conditions. This is to ensure protection circuits can be accurate and that stable operation is maintained. Additionally, the structural design of the product permits a maximum of 8 A pulse current.

The MXSMLCJLCE54A offers numerous benefits in its design. As well as fast reaction times, it also boasts minimal leakage current, low clamping voltage, and minimal voltage variation. Thanks to the design of the product, its widely used applications in automotive, telecom, and industrial applications. Due to its ever growing popularity, the diode can now be easily purchased from electrical stores and online outlets.

To sum up, MXSMCJLCE54A has many advantages over similar products. Its reverse breakdown voltage is 54 Volts (54V) and it offers superior protection against electrical transients of up to 66V. It also boasts no rated capacitance, fast response time, UL certification, and a zener diode integrated into the product. As a result, it offers excellent performance under varying temperature and current conditions, and is a perfect solution for electrical protection.

The specific data is subject to PDF, and the above content is for reference

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