Allicdata Part #: | MZP4749ATA-ND |
Manufacturer Part#: |
MZP4749ATA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 24V 3W AXIAL |
More Detail: | Zener Diode 24V 3W ±5% Through Hole Axial |
DataSheet: | MZP4749ATA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 24V |
Tolerance: | ±5% |
Power - Max: | 3W |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 18.2V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | Axial |
Base Part Number: | MZP4749 |
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The MZP4749ATA is a unidirectional, single Zener diode that provides reliable protection against Electrostatic Discharge (ESD) for sensitive components in high-voltage circuits. It has an ESD protection level of 70 kV, making it suitable for use in applications where high-voltage protection is essential. The diode has an avalanche power rating of 200 mW and an operating temperature range of -55°C to +125°C.
The diode is packaged in a small, surface-mount configuration and features high-reliability operation and superior noise immunity. The MZP4749ATA can be used to provide a source of negative voltage in high-voltage applications, as well as to protect against electrical overstress (EOS). Furthermore, it can be used to provide a source of surge protection when transients occur on the circuit.
The MZP4749ATA diode works on the principle of reverse-biased breakdown. It has a highly reliable reverse-biased breakdown voltage which is maintained even in the presence of short circuits, noise, and high-frequency voltages. When a reverse bias voltage is applied to the diode, the potential between the two ends increases until the Zener temperature coefficient begins to reduce the potential. When the potential reaches the breakdown voltage level, a large current spike is created and the current flow stabilizes at a level determined by the Zener temperature coefficient. The effect of the Zener temperature coefficient on the current flow is commonly referred to as the “Zener effect”, which is one of the primary factors determining the behavior of the diode.
This diode is most often used to protect sensitive electrical components from high voltage transients, as well as to provide a source of negative voltage for applications requiring low voltage control. For example, it is commonly used in ESD protection circuits for semiconductor devices, which require the diode to provide constant protection against destructive electrical spikes. Similarly, it can be used to provide surge protection for high voltage circuits, such as for power distribution and industrial automation applications.
The MZP4749ATA diode provides reliable protection from ESD, EOS, and transients, while also providing a source of negative voltage in high voltage applications. It is packaged in a small, surface-mount configuration and has a high-reliability operating temperature range of -55°C to +125°C. This makes it suitable for use in various applications where high-voltage protection is essential.
The specific data is subject to PDF, and the above content is for reference
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