Allicdata Part #: | N2M400FDB311A3CFTR-ND |
Manufacturer Part#: |
N2M400FDB311A3CF TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 32G MMC 52MHZ 100LBGA |
More Detail: | FLASH - NAND Memory IC 32Gb (4G x 8) MMC 52MHz |
DataSheet: | N2M400FDB311A3CF TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 32Gb (4G x 8) |
Clock Frequency: | 52MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | MMC |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | -- |
Supplier Device Package: | -- |
Base Part Number: | N2M400 |
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Introduction
N2M400FDB311A3CF TR is a type of memory specifically designed for industrial applications. It is an FRAM memory device that offers fast write times and a wide operating temperature range. This device offers an extremely low power consumption as well as a long life cycle. The N2M400FDB311A3CF TR offers high non-volatility, excellent read/write endurance and a reliable memory solution, even in harsh and extreme environments. The N2M400FDB311A3CF TR has a wide operating temperature range of -40°C to +85°C. It is also able to withstand significant mechanical stresses, providing high durability and reliability over the product’s lifetime.
Application Field
The N2M400FDB311A3CF TR memory has a wide range of applications, including data logging, data indexing and industrial automation applications. In industrial automation applications, N2M400FDB311A3CF TR can be used in conjunction with an external microcontroller to provide a secure memory solution for data logging and indexing. The N2M400FDB311A3CF TR is also used in data logging applications, where it can be used to store records of data readings at predetermined intervals. Additionally, N2M400FDB311A3CF TR is suitable for embedded systems where low power consumption, high data integrity and long lifetime requirements are a priority.
Working Principle
The N2M400FDB311A3CF TR device works based on the ferroelectric random access memory (FRAM) technology. FRAM technology provides reliable data storage with fast write speeds and short access time. The N2M400FDB311A3CF TR memory device stores data in ferroelectric materials as opposed to traditional magnetic media. This allows the device to store data even in the absence of power and to protect data during power interruptions. The N2M400FDB311A3CF TR is also designed to tolerate changes in temperature, humidity, and shock without affecting the data integrity. As the data is stored in ferroelectric materials, the memory device can be re-programmed for different applications without altering the physical layout.
Conclusion
The N2M400FDB311A3CF TR is a reliable memory device and provides a secure memory solution for industrial automation and data logging applications. It can be re-programmed for different applications with no physical changes. The device is also capable of withstanding extreme environmental conditions and provides reliable operation in industrial automation applications. In summary, the N2M400FDB311A3CF TR is an ideal choice for industrial applications and offers enhanced usability and performance in challenging operating environments.
The specific data is subject to PDF, and the above content is for reference
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