Allicdata Part #: | N2M400GDB321A3CFTR-ND |
Manufacturer Part#: |
N2M400GDB321A3CF TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64G MMC 52MHZ 100LBGA |
More Detail: | FLASH - NAND Memory IC 64Gb (8G x 8) MMC 52MHz |
DataSheet: | N2M400GDB321A3CF TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 64Gb (8G x 8) |
Clock Frequency: | 52MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | MMC |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | -- |
Supplier Device Package: | -- |
Base Part Number: | N2M400 |
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Memory has been an integral part of computing since its inception. Its purpose is to store and retrieve data quickly and efficiently. N2M400GDB321A3CF TR is a versatile memory type that is used for various applications. In this article, we will discuss the application field and working principle of N2M400GDB321A3CF TR.
What is N2M400GDB321A3CF TR?
N2M400GDB321A3CF TR is a type of DRAM (Dynamic Random Access Memory) that is frequently used as an alternative to SRAM (Static Random Access Memory). It is an ultra-fast memory type that is capable of transferring data at much higher speeds than SRAM. The decrease in latency and increase in speed lead to improved performance in applications such as gaming, cloud computing, big data analytics, and artificial intelligence.
Application Field of N2M400GDB321A3CF TR
N2M400GDB321A3CF TR is a versatile memory type that can be used for a variety of applications. It is commonly used for gaming, where it can provide the improved speed and lower latency needed for an optimal gaming experience. It is also used for high-performance computing, such as in cloud computing, big data analytics, and artificial intelligence. Its ultra-fast transfer rates and high capacity make it a great choice for these demanding applications. Furthermore, it is also used for industrial applications where reliability, speed, and power efficiency are essential.
Working Principle of N2M400GDB321A3CF TR
The working principle of N2M400GDB321A3CF TR is based on the concept of dynamic random access memory (DRAM). It consists of an array of capacitors and transistor pairs, which store the data in the form of electric charges. When a request is made, the corresponding charge is transferred to the transistor. The transistor then amplifies the charge to make it readable by the memory controller. The charging and discharging of the capacitors is done in a cyclic manner to maintain the data. The data is lost when the power supply is removed from the DRAM.
Advantages of N2M400GDB321A3CF TR
N2M400GDB321A3CF TR provides a number of advantages over other memory types. It is capable of transferring data at much higher speeds than SRAM, making it ideal for applications that require fast transfer and low latency. It is also more power-efficient than SRAM due to its lower voltage requirements. Furthermore, it has a higher storage capacity than SRAM, making it a great choice for high-performance computing applications.
Conclusion
N2M400GDB321A3CF TR is an ultra-fast memory type that is often used as an alternative to SRAM. It has a wide range of applications, from gaming to industrial applications, due to its fast transfer rates and high storage capacity. Its working principle is based on the concept of DRAM, which uses capacitors and transistor pairs to store the data in the form of electric charges. It also provides significant advantages over other memory types, including faster transfer rates and lower voltage requirements. Memory types such as N2M400GDB321A3CF TR are essential for modern computing and will continue to play a vital role in the years to come.
The specific data is subject to PDF, and the above content is for reference
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