N82SSHDG

N82SSHDG stands for N-Channel, 8.2 Volt Tolerant, Extended drain SOONAHM Super High Density Gate field effect transistor. This energy efficient and highly integrated technology is used to address various static field-effect MOSFET (mos-field-effect-transistor) applications. It has been designed and developed as an energy efficient and reliable switch for power conversion and control applications.

The N82SSHDG is a dual-gate logic-level enhancement mode MOSFET device designed to support the conversion, switching, and controlling of high voltage and high current digital/analogue signals. It has a high breakdown voltage of 8.2V with a drain current of 24A, and is highly efficient for powertrain, energy storage, and lighting applications. It has a very low power consumption making it suitable for use in portable and embedded devices.

The N82SSHDG is configured with two gates. The gates are Gate 1 and Gate 2. Gate 1 is responsible for controlling the device’s threshold voltage, while Gate 2 is used to switch the device on and off. The combination of these two gates enables the device to react dynamically and efficiently to changes in the external environment. This provides users with a more precise control over the device, and it is what makes the N82SSHDG so energy efficient.

The N82SSHDG has a logic-level voltage that enables it to drive logic signals in addition to rework and service applications. It also has an extended drain feature, which enables it to tolerate higher voltages, up to 8.2V. This makes the device suitable for use in higher voltage switching applications, such as high power motor control and high power AC/DC converters.

When it comes to usage, the N82SSHDG is suitable for use in both digital and analog systems. It is capable of driving transient logic signals in digital systems, and analog signals in audio and radio applications. It is also compatible with various power sources, including low voltage, high voltage, and battery systems. Its low power consumption makes it an excellent choice for applications with low power requirements, such as automotive and handheld devices.

In terms of safety, the N82SSHDG is capable of providing safe, reliable operation through its two-gate structure and low power consumption. This ensures that the device does not become too hot when operating at high voltage, which eliminates any potential risks of overheating or fire. The device is compliant with RoHS and JEDEC standards and has been extensively tested for performance, safety, and reliability.

In conclusion, the N82SSHDG is a highly efficient and reliable static field-effect MOSFET device designed to address various static field-effect MOSFET applications. It is capable of operating with both digital and analog signals, and is suitable for use in power conversion, switching, and controlling applications. Its high breakdown voltage and extended drain feature make it suitable for use in high voltage switching applications. Its two-gate structure and low power consumption ensure safe, reliable operation, making the N82SSHDG the ideal choice for automotive, handheld, and embedded device applications.