ND350N12KHPSA1

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The ND350N12KHPSA1 is a high-performance power semiconductor module from Infineon Technologies AG. It is a 1200V half-bridge module with TranSiC Thyristor diodes. This module is ideally suitable for use in robotics, renewable energies, aerospace applications, transportation and industrial automation.

This device has a maximum RMS on state current of 350A, a blocking voltage of 1200V and a gate trigger voltage of 1.44V. It also has a low inductance of 0.06mH, making it ideal for high-current and high-power switching applications.

The ND350N12KHPSA1 operates on the rectification principle to convert alternating current (AC) to direct current (DC). This is achieved by passing the AC current through two diodes arranged in an opposite direction. As a result, only one half of the alternating waveform is passed through, creating a DC waveform.

This semiconductor module also uses TranSiC thyristors. TranSiC thyristors are thyristors that utilizes Silicon Carbide (SiC), which is a material that has superior characteristics to Silicon (Si). It has a lower voltage drop and can therefore switch faster. This allows the module to operate with more efficiency and higher load handling than other power semiconductor modules without TranSiC thyristors.

The ND350N12KHPSA1 module is an ideal choice for applications where high-current or high-power switching is required, or where silicon carbide thyristors can offer advantage over a standard silicon device. It is most commonly used in robotics, renewable energies, aerospace applications, transportation, and industrial automation.

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