NE52418-A

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	5V
Frequency - Transition:	--
Noise Figure (dB Typ @ f):	1dB ~ 1.5dB @ 2GHz
Gain:	14dB ~ 16dB
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 3mA, 2V
Current - Collector (Ic) (Max):	40mA
Operating Temperature:	125°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	4-Super Mini Mold

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NE52418-A devices are high-performance transistor devices that are specifically designed for high-frequency radio use. They have low noise, robust design and power dissipation, and have been tested and certified for use in aircraft and military applications.The NE52418-A devices are bipolar junction transistors (BJTs) that are used in radio frequency (RF) applications. They are capable of high-frequency operation and have low noise and distortion figures, making them suitable for use in a variety of demanding applications. The devices are manufactured using advanced CMOS process technologies, which helps to provide efficient power management, increased system performance and lower power consumption.The main function of a bipolar junction transistor is to act as a switch or amplifier. The NE52418-A devices achieve this by controlling the current flow between two semiconductor junctions. These junctions are created when two different materials are connected together, such as a p-type and n-type silicon material. A voltage applied across the two junctions creates a current flow from the p-type to the n-type material. This current flow is the basis for all types of transistors in general.In AC applications, such as those used in radios, the NE52418-A transistors are used as amplifiers. The current flow is alternately reversed through the two junctions, which allows amplification of RF signal. In DC applications, the devices are used as switches. When a voltage is applied to the base of the device, current flows in one direction through the two junctions. When the voltage is removed, the device can be used as a digital switch, allowing current to flow in the opposite direction.The NE52418-A devices are also notable for their stability and robust design. The combination of low noise, strong design and power dissipation has been tested and proven in a variety of military and high-end applications. This makes them suitable for mission-critical applications where reliability is paramount.The NE52418-A devices are capable of operating across a wide frequency range, from low frequencies to GHz range. This makes them ideal for many types of radio use, including FM, AM, shortwave and satellite applications. They are also suitable for use in both high and low power applications. The devices are capable of handling much higher power levels than traditional transistors, which makes them ideal for high power applications in mobile telephones and other RF-based tools.In summary, the NE52418-A transistors are reliable, high performance devices that are specifically designed for RF applications. They have low noise, robust design and power dissipation, making them suitable for a variety of demanding applications. The devices are also capable of operating across a wide frequency range, from low to GHz range, and are suitable for use in high and low power applications. Together, these features make the NE52418-A devices an excellent choice for industrial, military and high-end applications.

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