NE52418-T1-A Allicdata Electronics
Allicdata Part #:

NE52418-T1-A-ND

Manufacturer Part#:

NE52418-T1-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: IC AMP HBT GAAS LN 4-SMINI
More Detail: RF Transistor NPN 5V 40mA 150mW Surface Mount 4-S...
DataSheet: NE52418-T1-A datasheetNE52418-T1-A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: --
Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 2GHz
Gain: 14dB ~ 16dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: 4-Super Mini Mold
Description

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NE52418-T1-A is a commercial bipolar junction transistor (BJT) used for radio frequency (RF) applications. It is a general purpose NPN silicon device that can be used for a wide variety of uses. This includes audio amplifiers, high-frequency oscillators, RF power amplifiers for cellular base stations, radio transmitters, and VHF and UHF receivers. This transistor operates in the frequency range up to 8GHz and it is typically used in applications with power levels up to 250 watts.

The NE52418-T1-A transistor is designed with a Darlington configuration. This arrangement of the transistors increases its current gain, making it suitable for use in amplifiers and other signal processing applications. The transistor has an NPN construction and is housed in a single package. It includes two E-bases and two emitters, which are connected in anti-parallel. The two emitters are also connected to the collector allowing the current to flow through the external components.

The NE52418-T1-A is designed to provide higher current gain and better output characteristics than other transistor types. It has good linearity and low noise. It is capable of operating at high frequencies, and its high breakdown voltage makes it suitable for use in high-voltage applications. The Darlington configuration is designed to provide good common-mode performance, with low distortion and low current noise.

The NE52418-T1-A can be used in a variety of RF applications. It can be used for radio frequency generation, radio receivers, FM radio transmitters, cellular base stations, and satellite communications. The device can also be used in high-frequency amplifiers, audio amplifiers, linear amplifiers, and signal conditioning circuits. It can be used in different types of amplifiers including wideband, narrowband, and multi-band amplifiers.

The NE52418-T1-A has a high power handling capability. It is rated to handle up to 250 watts of input power, making it suitable for high-power applications. The transistor is also able to maintain linearity even when subjected to high levels of current. This feature makes it ideal for use in amplifiers with high levels of peak-to-peak signals.

The NE52418-T1-A is a reliable and efficient transistor that can be used in many different types of RF applications. The device has high power handling and linearity, making it suitable for use in a wide range of applications. Its Darlington configuration provides good common-mode performance, making it suitable for use in communications systems. Its low-noise and high-frequency performance make it ideal for use in audio amplifiers, VHF and UHF receivers, and other signal processing applications.

The specific data is subject to PDF, and the above content is for reference

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