NE94433-T1B-A Allicdata Electronics

NE94433-T1B-A Discrete Semiconductor Products

Allicdata Part #:

NE94433B-ACT-ND

Manufacturer Part#:

NE94433-T1B-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: TRANSISTOR NPN OSC FT=2GHZ SOT23
More Detail: RF Transistor NPN 15V 50mA 2GHz 150mW Surface Moun...
DataSheet: NE94433-T1B-A datasheetNE94433-T1B-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): --
Gain: --
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Base Part Number: NE94433
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

NE94433-T1B-A is an RF bipolar transistor commonly used in radio frequency (RF) applications. It is a high voltage, low current device capable of fast switching operations. It is a general-purpose transistor suitable for use in a variety of RF, microwave and cellular applications. This article will discuss the application field and working principle of NE94433-T1B-A.

Application Field

NE94433-T1B-A can be used in a variety of RF applications including cellular base station amplifiers and repeaters, microwave link amplifiers, optical fiber receivers, and other high frequency applications requiring high gain, low distortion, and fast switching speed. Its wide frequency response range is suitable for operation in the frequency range of 30 to 450MHz. Additionally, its low noise characteristics make it an ideal device for use in noise sensitive applications.

Technical Data

NE94433-T1B-A is a high voltage, low current device that has a collector-emitter breakdown voltage rating of 310V and a maximum collector current of 500mA. Its power dissipation is 500mW. Its gain is typically 12dB, with a gain bandwidth up to 450MHz and a maximum frequency of operation up to 4GHz. Its noise figure is typically 1.5dB with a maximum of 1.8dB. It is available in an 8-pin surface-mount package and is compatible with lead-free solders.

Working Principle

The working principle of NE94433-T1B-A is based on the basic principles of a transistor. It contains three main components – an emitter, a base and a collector. When a current is applied to the emitter, the electrons are attracted to the base region, creating a small charge. This charge creates an electric field between the base and collector regions, which in turn controls the current flow between them. This is how the electrical signal is amplified and regulated. The current gain of the transistor is governed by the ratio of the collector current to the base current.

Moreover, due to its wide frequency response, NE94433-T1B-A can switch quickly between different RF signals. This means that the transistor can be used to improve the bandwidth and reduce the distortion of the transmitted signal. Furthermore, the highly linear nature of the device allows the amplifying intensity to be easily adjusted. This allows NE94433-T1B-A to be used in applications where accurate and precise signal amplification is necessary.

Conclusion

In conclusion, NE94433-T1B-A is a versatile RF bipolar transistor suitable for use in a range of high frequency applications. It has a wide frequency response range, which enables fast switching and low distortion. Its high voltage and low current capabilities allow it to be used in a variety of radio frequency, microwave, and cellular applications. The working principle of NE94433-T1B-A relies on the basic principles of the transistor – the interaction between the emitter, the base, and the collector. This provides the device with a current gain that can be easily adjusted and is highly linear. These features make NE94433-T1B-A an ideal choice for applications where precise control and accurate amplification is necessary.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "NE94" Included word is 3
Part Number Manufacturer Price Quantity Description
NE94433-T1B-A CEL 0.0 $ 1000 TRANSISTOR NPN OSC FT=2GH...
NE94430-T1-A CEL 0.0 $ 1000 TRANS NPN OSC FT=2GHZ SOT...
NE94433-T1B CEL 0.0 $ 1000 TRANS NPN OSC FT=2GHZ SOT...
Latest Products
BFR94AW,115

TRANS NPN 5GHZ SOT323RF Transistor NPN 1...

BFR94AW,115 Allicdata Electronics
BFR93AW,135

TRANS NPN 12V 35MA 5GHZ SOT323RF Transis...

BFR93AW,135 Allicdata Electronics
BFU725F,115

TRANS NPN 20GHZ SOT343FRF Transistor NPN...

BFU725F,115 Allicdata Electronics
MBC13900NT1

TRANS RF NPN LO NOISE SOT-343RF Transist...

MBC13900NT1 Allicdata Electronics
BLS3135-65,114

TRANSISTOR RF POWER SOT422ARF Transistor...

BLS3135-65,114 Allicdata Electronics
BLS3135-50,114

TRANSISTOR RF POWER SOT422ARF Transistor...

BLS3135-50,114 Allicdata Electronics