NE94433-T1B

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NE94433-T1B is an NPN Transistors-Bipolar (BJT) - RF designed by Panasonic. This transistor is packaged in a SC-88A type leaded package which is ideal for a wide range of applications. It has a wide operating range, a high breakdown voltage and excellent thermal stability.

The NE94433-T1B transistor can be used in a wide range of applications such as for radio-frequency (RF) power amplifiers, radio-frequency switching and RF oscillator circuits. It can also be used for linear amplification and local oscillators in audio-frequency, video-frequency and power amplifier applications. In addition, it can be utilized in AC/DC converters and DC/DC converters.

The NE94433-T1B transistor device has a maximum collector-emitter voltage of 200V, and a maximum collector current of 2A. It exhibits excellent linearity and high gain with a minimum gain of 30 and a maximum gain of 200. The junction temperature range is approximately 200 to 350 °C. The power dissipation range is 4.3 to 11.2 watts. It also has a maximum storage temperature of 150°C.

The working principle of the NE94433-T1B transistor is based on the fact that current flow between its collector and emitter is dependent on the voltage applied to the base. When a positive voltage is applied to the base, a current will flow from the collector to the emitter. This is known as the forward bias condition. Conversely, when a negative voltage is applied to the base, the flow of current is blocked and the device is said to be in the reverse bias condition.

In the forward bias condition, a small part of the collector current passes through the base and is termed as the "emitter current". This current is what causes the transistor to amplify or switch signals at high frequencies. The amplification factor of the NE94433-T1B transistor is typically in the range of 30 to 200, depending on the bias conditions. In the reverse bias condition, the transistor is effectively in an "off" state and the collector current is typically very low.

This transistor is also featured with a 100µA emitter cutoff current which prevents substantial current flow during the reverse bias condition. This prevents the transistor from being damaged due to large reverse bias currents. The NE94433-T1B transistor also has a low collector-emitter saturation voltage of 0.2V which makes it ideal for signal processing applications.

In conclusion, the NE94433-T1B transistor is a versatile and reliable device designed to be used in a variety of applications, such as audio-frequency, radio-frequency and power amplifier applications. Its high gain and low saturation voltage make it an ideal choice for linear and switching electronics. Furthermore, the use of an emitter cutoff current ensures the device does not suffer from large reverse bias currents.

The specific data is subject to PDF, and the above content is for reference