NGB15N41CLT4

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NGB15N41CLT4 is a single advanced, high-speed switching IGBT (Insulated Gate Bipolar Transistor). It is a type of transistor which uses gate insulation to control a vertical conduction channel between collector and emitter. When gate voltage is applied, the conduction channel opens and electric current can flow from collector to emitter. Therefore, the NGB15N41CLT4 is suited for applications such as: Motor control, Switching power converter, digital displays, Automotives, Industrial heating.

The NGB15N41CLT4 has three main features that make it ideal for these applications. Firstly, it has an integrated High Speed Driver (HSD). This means that the power loss of the IGBT circuit is significantly reduced, as the switching speed of the IGBT is increased by enabling an earlier transistor turn-on. Secondly, the IGBT has a wide dynamic resistance range. This is essential to optimize the IGBT’s performance in the majority of motor control applications. And thirdly, the NGB15N41CLT4 has a low threshold voltage. This improves the IGBT’s transient response time and serves to protect the device from over voltage protection.

Another key feature of the NGB15N41CLT4 IGBT is its working principle. It works by applying a small voltage to the gate terminal of the IGBT in order to change the current flow in the electrical circuit. When gate voltage is applied, the collector-emitter junction is opened and current will flow from collector to emitter. This enables the user to control the voltage and current levels in the electrical circuit. The gate terminal can then be reverse biased in order to turn off the transistor, switching off the current flow.

In conclusion, the NGB15N41CLT4 is an advanced, high-speed switching IGBT designed for applications such as motor control, switching power converters, digital displays, industrial heating and automotive electronics. Its working principle depends on applying a small gate voltage to the gate terminal in order to switch the transistor on or off. Its integrated High Speed Driver, wide dynamic resistance range and low threshold voltage serve to optimize its performance and protect the device from overvoltage protection.

The specific data is subject to PDF, and the above content is for reference