Allicdata Part #: | NGB18N40ACLBT4G-ND |
Manufacturer Part#: |
NGB18N40ACLBT4G |
Price: | $ 0.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Littelfuse Inc. |
Short Description: | IGBT 430V 18A 115W D2PAK3 |
More Detail: | IGBT 430V 18A 115W Surface Mount D2PAK |
DataSheet: | NGB18N40ACLBT4G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 2 (1 Year) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
800 +: | $ 0.52259 |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 4V, 15A |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Input Type: | Logic |
Switching Energy: | -- |
Power - Max: | 115W |
Series: | -- |
Current - Collector Pulsed (Icm): | 50A |
Current - Collector (Ic) (Max): | 18A |
Voltage - Collector Emitter Breakdown (Max): | 430V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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NGB18N40ACLBT4G is a type of Insulated-Gate Bipolar Transistor (IGBT) that is single. It is used in many applications, such as in electric motors, in high speed switching, and even in power supply circuits. IGBTs are commonly used in industrail applications, and they have the ability to switch high voltage and currents on-off with high efficiency.
The NGB18N40ACLBT4G IGBT uses a typical MOSFET gate driver. It has a reverse conducting topology, which means its emitter is pin connected to the collector junction. This makes it easier to connect even when the load is small. The transistor is also designed to have low on-state and switching losses, allowing for high efficiency in output power.
When using the NGB18N40ACLBT4G IGBT, there are a few considerations to be made. Firstly, when the load is low, the collector-emitter voltage should be kept low to prevent short circuit. Secondly, the device\'s reverse conducting topology means the gate voltage should be applied through the emitter lead to ensure smooth operation. Lastly, the device should have adequate heat dissipation to prevent it from overheating.
The working principle of the NGB18N40ACLBT4G IGBT is relatively simple. In the on-state, a positive gate voltage is applied to the gate-emitter junction, which causes the MOSFET gate driver to emit a strong electric field. This in turn allows electrons from the collector region to enter the channel and provide the necessary current for conduction. In the off-state, the gate voltage is reversed, creating an electric field that repels the electrons from entering the channel and preventing conduction.
The NGB18N40ACLBT4G is typically used in applications such as power supplies, inverters, and even automotive electronics. As mentioned earlier, one of its advantages is its ability to switch high voltage and current on/off with high efficiency. Therefore, it is ideal for applications that require high power and reliability. Its simple operation also makes it suitable for many commercial and residential applications.
In conclusion, the NGB18N40ACLBT4G is an IGBT that is single and used in many applications. Its reverse conduction topology makes it easy to connect when the load is small. Its high efficiency in switching high currents on/off also makes it ideal for applications such as power supplies and inverters. Its simple operation means that it is suitable for many commercial and residential applications, such as in automotive electronics.
The specific data is subject to PDF, and the above content is for reference
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