NGP15N41CL

Transistors - IGBTs - Single

The NGP15N41CL is a member of the NGP-series of IGBTs (Insulated Gate Bipolar Transistors) from STMicroelectronics, a semiconductor material manufacturers. The NGP15N41CL is an IGBT optimized for turn-on and operating at a high junction temperature, making it an ideal choice for many high-power applications.

The NGP15N41CL is an insulated gate bipolar transistor (IGBT) with an optimized on-state voltage drop. It is designed for low-loss switching in consumer and industrial applications. The transistor has an intrinsic IGBT structure, which integrates a PN junction between the main emitter and collector, and a PN junction between the gate and the main emitter. It has typical on-state characteristics of 15A/400V at 25°C.

The NGP15N41CL is a single device IGBT, meaning it only requires a single device for operation. This means its efficient power usage is increased, reducing size and cost. It’s also capable of operating at a high junction temperature (Tj = 125°C; With an adjustment factor from -25°C to +55°C) and its emission current capability at 300V is 15A.

The NGP15N41CL’s high-performance switching means it’s suitable for a range of applications, such as in industrial equipment, solar inverters, power supplies and lighting. With a high performance and fast switching, it is ideal for applications that require a high reverse voltage blocking capability, such as motor drives and vehicle charging.

The NGP15N41CL works by a process known as avalanche-avalanche ionization. This occurs when the PN junction created when the gate is switched on is held in a static electrical field. As the electrical field between the PN junction increases, the majority carriers of electrons and holes become increasingly mobile. This creates increasing electron and hole current, leading to large energy dissipations and carriers escaping the junction. The energy dissipated in the NGP15N41CL avalanche-avalanche ionization is sufficient to create an on-state voltage drop. This can be visualized as electron and hole current being created along the reverse current paths, which reduces the forward voltage drop of the diode.

The NGP15N41CL’s high performance, low-loss switching, and avalanche-avalanche ionization make it the perfect choice for many high-power applications. It is capable of fast switching, high junction temperature operation, and a high reverse voltage blocking capability, making it an ideal choice for a range of devices. Its single device architecture and ability to operate at high junction temperatures make it ideal for complex designs, as it can be easily integrated as part of a larger system. Its high performance and fast switching make it an ideal choice for many high-power applications that require a high reverse voltage blocking capability.