NGP15N41CLG Discrete Semiconductor Products

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The NGP15N41CLG is a single IGBT (Insulated Gate Bipolar Transistor) that is used in a variety of application fields and provides reliable and efficient operation.

An IGBT is a type of transistor that combines the best of both a bipolar junction transistor (BJT) and a field-effect transistor (FET). The NGP15N41CLG is a single type IGBT, and it is used mainly in high frequency circuits and power applications, such as power supplies, motor control and switch mode power supplies. The single IGBT can also be used in telecommunications and consumer electronics, where space and cost savings are important.

The working principle of the NGP15N41CLG single IGBT is based on the construction and properties of an IGBT. A conventional BJT consists of two p-n junctions and two P-N diodes. In an IGBT, the two P-N diodes are replaced by two insulated gate FETs (IGFETs), one p-type and one n-type. The IGFETs can be used to control the current flow between the two p-type and n-type layers. This is referred to as the “gate control” of the IGBT.

When a positive voltage is applied to the gate of the IGBT, a junction is formed between the P and N layers, allowing current to flow between the two layers. This is referred to as the “on-state”. When a negative voltage is applied to the gate, it increases the resistance between the P and N layers, preventing current flow between them. This is referred to as the “off-state”. This bi-directional control of the IGBT allows it to be used in a variety of application fields.

The NGP15N41CLG single IGBT has a maximum current load of 15A, a collector-emitter voltage of 400 volts, and an operating frequency range from 200kHz to 1 MHz. It also has a low saturation voltage which makes it perfect for power usage. The NGP15N41CLG single IGBT is rated for a collector-emitter voltage of 650 volts and a collector-gate voltage of 20 volts. Additionally, it has a robust gate structure for enhanced reverse-conducting or dv/dt immunity.

The NGP15N41CLG single IGBT is also RoHS compliant and can be used in a wide range of applications. It is ideal for high frequency power supplies, motor control, and pulse-width modulation applications. Additionally, it can be used in telecom equipment and UPS systems. The robust gate structure makes it suitable for high dV/dt applications, and it is ideal for use in automotive, medical, and industrial applications.

The NGP15N41CLG single IGBT is designed with a high conductivity silicone substrate and a thin-film metal-oxide-semiconductor (MOS) gate structure. This ensures excellent high frequency operation, allowing it to be used in applications such as high-frequency power supplies and motor control. Additionally, the low saturation voltage ensures low losses and fast switching times.

Overall, the NGP15N41CLG single IGBT is an excellent choice for a variety of application fields. Its robust gate structure and low saturation voltage make it perfect for high frequency power supplies and motor control, while its RoHS compliance makes it suitable for a wide range of applications. Additionally, its thin-film MOS gate structure ensures excellent operation at high frequencies. As such, it is the perfect choice for a variety of applications.

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