Transistors - IGBTs - Single

The NGTG40N120FL2WG is a discrete IGBT component produced by ON Semiconductor and is part of the NGTG40N120FL2WG series. It is made from a silicon material in a four-pin package. This IGBT exhibits a low ON-state voltage drop at a maximum current of 40A and up to speeds of 1.2 microseconds.

Application Field

The NGTG40N120FL2WG IGBT has a wide range of applications and is used in various switching and level shifting applications. This IGBT is capable of switching up to 600V. As a result, the NGTG40N120FL2WG is commonly used in industries such as power, HVAC, lighting, and renewable energy. This IGBT is particularly popular in applications requiring high-speed switching and low on-state losses.

Working Principle

The NGTG40N120FL2WG IGBT operates on a simple principle: when the base current is insufficient to keep the device in a forward conduction mode, then it will have to switch to a reverse bias mode. During the forward bias, there is a voltage drop across the IGBT. This voltage drop is the result of electrons flowing from the N-type base region to the P-type base region and then out of the collec-tor. During the reverse bias, a lesser amount of electrons can flow through the device.

Similarly, the NGTG40N120FL2WG IGBT can operate in both blocking and saturating modes. In the blocking mode, the device does not conduct either current or voltage and the Vce-SAT is effectively zero. When in the saturating mode, the conduction and switching performance of the IGBT is much more stable and efficient.

The NGTG40N120FL2WG IGBT is also known for its low on-state losses which make it ideal for applications with prolonged usage on continuous loads. This IGBT is also notable for its peak diode recovery, which determines the speed of the IGBT\'s operation in reverse bias mode.

Conclusion

The NGTG40N120FL2WG IGBT is a versatile and powerful IGBT component which is suitable for a wide range of applications. It is known for its excellent switching performance, low on-state losses, and peak diode recovery. Additionally, this IGBT is capable of operating at up to 600V, making it a popular choice in high-voltage applications.