NHPD660T4G Discrete Semiconductor Products |
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Allicdata Part #: | NHPD660T4GOSTR-ND |
Manufacturer Part#: |
NHPD660T4G |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 600V 6A DPAK |
More Detail: | Diode Standard 600V 6A Surface Mount DPAK |
DataSheet: | NHPD660T4G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.23594 |
5000 +: | $ 0.22414 |
12500 +: | $ 0.21571 |
25000 +: | $ 0.20897 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 3V @ 6A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 30µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The NHPD660T4G is a semiconductor diode part of the Rectifiers - Single family. It is primarily used for switching applications, as a high-speed switch for frequencies up to GHz range, and as an integrated rectifier in power circuits.
Constructively, the NHPD660T4G is a dual-channel, silicon, epitaxial planar rectifier device, with a common anode and opposite cathodes. Its dimensions amount to a total of 4x2x1mm, and its voltage and current ratings are 60V and 660mA, respectively.
The basic application of the NHPD660T4G lies in the use as an integrated rectifier in power circuits; with such, it can be used to switch loads with high frequencies, in the GHz range. It can also be used to reduce the voltage, reduce waveforms, and thus limit the power dissipated when driving more than one device from a single source.
The principle of operation for the NHPD660T4G is based on the two energy-structure diagrams for the two sections of the diode, biased in a forward direction. When a forward voltage is applied to the diode, the hole current flow from the source to the collector cause a charge buildup in the anode of the upper section, resulting in a conducting current path. Similarly, a reverse voltage applied to the diode is clamped off, as the charge buildup in the anode of the lower section causes a blocking effect.
In order to use the NHPD660T4G in practical applications, the diode must first be properly mounted onto a printed circuit board. It is crucial that the diode is connected directly to the board\'s ground plane, minimizing stray effects due to the inductance of parasitic components. The design of the circuit must also take into account the power dissipation of the device, so that it is within the specified rating.
Overall, the NHPD660T4G is an efficient, high-speed diode rectifier widely used in power circuit designs. Its well-defined energy structure diagrams provide an excellent basis for operating the diode at high frequencies, and its small size makes it perfect for applications involving limited space. When mounted and used properly, it will reliably switch loads with high speed and great accuracy.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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NHPD660T4G | ON Semicondu... | 0.26 $ | 1000 | DIODE GEN PURP 600V 6A DP... |
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