Allicdata Part #: | NHPV08S600G-ND |
Manufacturer Part#: |
NHPV08S600G |
Price: | $ 0.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 600V 8A TO220-2 |
More Detail: | Diode Standard 600V 8A Through Hole TO-220-2 |
DataSheet: | NHPV08S600G Datasheet/PDF |
Quantity: | 500 |
1 +: | $ 0.68040 |
50 +: | $ 0.57683 |
100 +: | $ 0.47382 |
500 +: | $ 0.39142 |
1000 +: | $ 0.30902 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 3.2V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 30µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The NHPV08S600G device is a single diode rectifier in a TO-220 isolated package that offers an excellent price to performance alternative for applications where low conduction and reverse recovery losses are important. With their low forward voltage drop and low reverse leakage current, the NHPV08S600G provides a variety of solutions for medium to high power applications.
Features
The NHPV08S600G is a 400 V, 8 A rectifier that offers excellent performance in a package with a low power dissipation (as much as 80 mW), high repetitive avalanche energy, low forward voltage drop and leakage current, reduced switching losses, and ultra-low reverse recovery time. The device is also available with a low-thermal resistance package, which allows for increased power dissipation, and thermal derating to prevent catastrophic device failure.
Applications
The NHPV08S600G is well suited for use in a variety of medium to high power applications, such as regulated DC/DC converters, switching regulators, DC/AC inverters, power rectification, UPS systems, automotive power supplies, and server power supplies.
Working Principle
The NHPV08S600G device operates in a single diode rectification mode. It has a symmetrical rectification characteristic which helps to keep the input and output voltages balanced. A single junction field effect transistor (JFET) is used to handle the surge current and protect the diode in case of an overload. The NHPV08S600G is also anavalanche-proven device, meaning it is designed to withstand high voltage transients.
The device has a number of safety features, including a soft-starting option, over-current protection, temperature monitoring, and over-voltage protection. Additionally, its monolithic construction ensures a high level of robustness and reliability.
Conclusion
The NHPV08S600G rectifier provides a reliable and cost-effective solution for medium to high power applications. With its low forward voltage drop and low reverse leakage current, it is a versatile and robust option for DC/DC converters, switching regulators, and other power electronics applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NHPV08S600G | ON Semicondu... | 0.75 $ | 500 | DIODE GEN PURP 600V 8A TO... |
NHPV15S600G | ON Semicondu... | 0.7 $ | 1000 | DIODE GEN PURP 600V 15A T... |
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