NJD2873RL Allicdata Electronics
Allicdata Part #:

NJD2873RL-ND

Manufacturer Part#:

NJD2873RL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 50V 2A DPAK
More Detail: Bipolar (BJT) Transistor NPN 50V 2A 65MHz 1.68W Su...
DataSheet: NJD2873RL datasheetNJD2873RL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 1.68W
Frequency - Transition: 65MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: NJD2873
Description

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NJD2873RL is an example of a single bipolar junction transistor (BJT), specifically a NPN type transistor.

In its simplest form, a BJT consists of two P-type semiconductor materials, called the collector and the emitter, which are separated by a piece of N-type semiconductor material. The collector and the emitter take the form of two metal electrodes and are connected to the base of the transistor through the N-type semiconductor material, known as the base. When the transistor is turned on, current flows from the collector to the emitter. This current is known as the collector current, and is controlled by a signal voltage applied to the base of the transistor.

The NJD2873RL is designed as a general-purpose NPN switching and amplifier transistor, making it suitable for a variety of applications. It is suitable for use in datasheet-defined power transistors driving arrays of LED\'s and photodiodes, motor control applications, and as drivers for small DC motors. It is also suitable for use in linear applications, such as amplification and signal switching, as well as in the control of variable-speed motors.

The NJD2873RL is a very popular choice for applications that require high speed switching, as it has a maximum continuous collector current of 400mA and a fast turn-on time of 3 microseconds. It is also capable of switching at frequencies of up to 120 MHz and can operate at high collector-to-emitter voltages of up to 50V. Additionally, the transistor features an excellent thermal resistance rating of 0.50°C/W, making it well suited for use in thermally demanding environments.

The operating principle of the NJD2873RL is relatively straightforward. When a base current is applied to the NJD2873RL, a region of minority carrier concentration is created at the semiconductor junction between the collector and emitter. This reduces the contact potential between the collector and emitter, allowing current to flow from the collector to the emitter, and thus allowing the device to be used as a switch. The amount of current that can flow through the collector is directly proportional to the amount of base current applied, making it ideal for use in applications requiring adjustable current regulation.

In summary, NJD2873RL is a versatile, high-speed NPN switching and amplifier transistor, suitable for a variety of applications. Its fast turn-on time and high collector-to-emitter voltages make it particularly suitable for switching and amplification, while its excellent thermal resistance allows it to be used in thermally demanding environments. In addition, with its operating principle based on a region of minority carrier concentration, it is easy to precisely regulate the current flowing through the collector.

The specific data is subject to PDF, and the above content is for reference

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