NJD35N04T4G Discrete Semiconductor Products |
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Allicdata Part #: | NJD35N04T4GOSTR-ND |
Manufacturer Part#: |
NJD35N04T4G |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 350V 4A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 350V 4A ... |
DataSheet: | NJD35N04T4G Datasheet/PDF |
Quantity: | 5000 |
2500 +: | $ 0.25913 |
5000 +: | $ 0.24678 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 350V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 20mA, 2A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 2A, 2V |
Power - Max: | 45W |
Frequency - Transition: | 90MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | NJD35N04 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NJD35N04T4G is an N-Channel silicon insulated gate field-effect transistor (FET) from On Semiconductor that is used in a variety of products such as amplifiers and motor controls. The device is classified under transistors - bipolar (BJT) - single. It is typically used as a switch and is characterized by its low on-resistance, low gate charge, and low input and output capacitance.
Overview
The NJD35N04T4G is built using a high-performance Silicon on Insulator (SOI) process and is designed to provide a high level of performance in a wide range of switching applications. It functions as an electronic switch that can be used to turn a circuit on or off. It is capable of switching currents of up to 5A and is ideal for applications such as motor controls and amplifiers. The low input and output capacitance is beneficial for improving the system efficiency and switching speed.
Features & Benefits
- High yield performance
- Low gate charge
- Low on-resistance
- Low input and output capacitance
- Operates with high speed
- High input impedance
- Low thermal resistance
Applications
The NJD35N04T4G is ideally suited for applications such as motor controls, power MOSFET gate drivers, power supply control, load switch protection, and amplifiers. It is also well-suited for a wide range of switching applications in which high performance is required.
Working Principle
The NJD35N04T4G works on the principle of electrical conduction. Its design allows it to switch currents in both directions, meaning that it can operate as an amplifier and/or switch. It is essentially a voltage-controlled current source, meaning that the current is controlled by the input voltage. The current is proportional to the voltage applied to the gate, allowing the user to accurately control the amount of current flowing through the device.
Conclusion
The NJD35N04T4G is a high-performance N-Channel silicon insulated gate field-effect transistor from On Semiconductor. It is ideal for switching applications and is characterized by its low gate charge, low on-resistance, and low input and output capacitance. The device is well-suited for applications such as motor control and amplifiers, as well as a variety of other switching applications. It works on the principle of electrical conduction, allowing the user to control the current passing through the device with input voltage.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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NJD35N04G | ON Semicondu... | 0.67 $ | 1000 | TRANS NPN DARL 350V 4A DP... |
NJD35N04T4G | ON Semicondu... | 0.29 $ | 5000 | TRANS NPN DARL 350V 4A DP... |
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