NJL1302DG Allicdata Electronics
Allicdata Part #:

NJL1302DGOS-ND

Manufacturer Part#:

NJL1302DG

Price: $ 3.64
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 260V 15A TO-264
More Detail: Bipolar (BJT) Transistor PNP + Diode (Isolated) 26...
DataSheet: NJL1302DG datasheetNJL1302DG Datasheet/PDF
Quantity: 9
1 +: $ 3.30750
10 +: $ 2.96856
100 +: $ 2.43243
500 +: $ 2.07068
1000 +: $ 1.74636
Stock 9Can Ship Immediately
$ 3.64
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP + Diode (Isolated)
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 260V
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
Power - Max: 200W
Frequency - Transition: 30MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-5
Supplier Device Package: TO-264
Description

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NJL1302DG Application Field and Working Principle

The NJL1302DG is a high-speed, low-saturation, low-power small bipolar junction transistor (BJT). This device is well suited for digital and analog applications due to its high speed and small size. The device has a wide range of applications in high frequency radios, mobile phone hardware and other digital signal processing systems. It is also used in automotive and communication systems.

Field of Application

The NJL1302DG is commonly used in digital circuits, analog circuits, wireless communication systems, audio amplifiers and other high frequency applications. It is capable of handling power signals up to 1GHz with a maximum operating voltage of 5V and a maximum operating temperature of 175 °C. This makes it a great option for high frequency and high power applications, such as those found in mobile phones and radio receivers.

Benefits

The main benefits of using the NJL1302DG are its low power consumption and high frequency capabilities. The device also features a wide range of features such as low leakage current, low collector-emitter saturation voltage, and a low noise figure. The device also offers a large range of packages, which allows designers to choose the exact type they need depending on their application.

Working Principle

The NJL1302DG is a bipolar junction transistor, which is a three-terminal device that is used to amplify or switch signals. The device consists of two N-type and one P-type doped regions that work together to create a conducting channel between the P and N regions. When a voltage or current is applied to the base-emitter junction, electrons are injected from the base region into the N-type region, creating a conducting channel between the collector and emitter. This allows current to flow between the collector and the emitter, and the amount of current flow is controlled by the amount of voltage or current applied to the base-emitter junction.

Conclusion

The NJL1302DG is an excellent choice for high frequency and high power applications, such as those found in radio receivers and mobile phones. The device’s low power consumption, high frequency capabilities and wide range of packages make it the perfect choice for these types of applications. In addition, its working principle allows it to provide amplification or switching of signals.

The specific data is subject to PDF, and the above content is for reference

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