Allicdata Part #: | NJL3281DGOS-ND |
Manufacturer Part#: |
NJL3281DG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 260V 15A TO-264 |
More Detail: | Bipolar (BJT) Transistor NPN 260V 15A 30MHz 200W T... |
DataSheet: | NJL3281DG Datasheet/PDF |
Quantity: | 3 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 260V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 1A, 10A |
Current - Collector Cutoff (Max): | 50µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 5A, 5V |
Power - Max: | 200W |
Frequency - Transition: | 30MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-264-5 |
Supplier Device Package: | TO-264 |
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Transistors are a key part of modern electronics, allowing reliable and efficient control and regulation of current between two nodes. Commonly encountered in fields such as digital logic and switching, transistors are typically categorized by their type of construction. This includes Bipolar Junction Transistors (BJT), Field Effect Transistors (FET), and others. Bipolar transistors, such as the NJL3281DG, consist of two doped sections for controlling current between two nodes, often referred to as the collector and base. In addition, an additional section called an emitter is used for controlling current leaving the transistor. By controlling the flow of current in this manner, the BJT can be used for various applications, including switching circuits, current amplification and various types of electronic amplifiers.
The NJL3281DG is a single BJT type transistor, meaning it is composed of one base, collector, and emitter. It is commonly used as a power amplifier, as it is able to both amplify voltage and current in order to drive electrical loads. Additionally, it can be used as a switch, allowing controlled connection and disconnection to other circuits. It is well suited to this purpose, as the base of the transistor can control the flow of current between the collector and emitter, with a low input current required for switching. This is done by controlling the voltage applied to the base of the transistor, as this varies the effective resistance seen between the collector and emitter.
The NJL3281DG is also well suited for linear signal amplification, as the input signal can be continuously varied, rather than switching between just two values. This linear signal amplification occurs when one of the input parameters, such as the base current, is held constant. This allows the transistor to continuously control the current controlled by the base, resulting in an increase in current from the collector to the emitter, thus increasing the voltage output of the transistor. This process is known as the Early Effect, due to the fact that the collector current is largely dependent on the base current at low voltage levels.
Furthermore, the NJL3281DG is often used as a resistive element, as the amount of current can be controlled by the base current. Due to the linearity of the transistor, the amount of resistance is also varied based on the voltage applied to the base. This leads to the creation of resistor networks, used to customize or “tune” the resistance in circuits. This can be used in any application such as signal filtering, signal attenuation, or voltage divider applications.
Overall, the NJL3281DG is a versatile and powerful single BJT transistor that is well suited for various switching and amplification applications. Due to its low power requirements, flexibility and reliability, it is often chosen for a number of different electronic circuits. Furthermore, its resistive properties make it particularly useful for creating custom resistance profiles, allowing for precise signal tuning or matching.
The specific data is subject to PDF, and the above content is for reference
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