NJV4030PT3G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 300mA, 3A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 1A, 1V
Power - Max:	2W
Frequency - Transition:	160MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223 (TO-261)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction
NJV4030PT3G is a high-performance, low-power dual NPN bipolar junction transistor for use in portable and mobile devices. It has low noise, high gain, and low power consumption, making it an ideal choice for a variety of power amplifier, analog preamp, and other high-speed switching applications in the RF and baseband stages. It is also suitable for high-voltage applications. This article will discuss the application field and working principle of NJV4030PT3G.
Application Field
NJV4030PT3G can be used to build amplifiers, RF switches, mixers and many other low noise, low power consumption applications. It provides a high gain of 1000MHz and is suitable for applications such as portable radios, cordless phones, and other high-speed switch applications.
Another application field of NJV4030PT3G is for high-voltage applications such as in passive matrix displays and liquid crystal displays. It can also be used to build high-current gain stages, pulse-width modulated (PWM) amplifiers, and non-single ended amplifiers for power management applications. Furthermore, NJV4030PT3G can be used for high-speed operation and high input impedance differential amplifiers and buffer amplifiers for general-purpose applications.
Working Principle
The NJV4030PT3G is a dual NPN bipolar junction transistor, meaning it has two P-N junctions sharing a common base electrode. The purpose of this structure is to amplify signals with low power consumption. When a small current is applied to the base of the transistor, it allows a larger current to flow through the two junctions to accomplish the amplification. In order for the transistor to work properly, the current must be of the correct polarity and must be strictly within the ratings of the transistor to avoid damage.
Another important concept related to NJV4030PT3G is its output characteristics. The output characteristics of a transistor define how it will perform when subject to different signals. The output characteristics of NJV4030PT3G are relatively stable over a wide range of frequency, temperature, and supply voltages. This makes it an ideal choice for applications such as radio frequency and high-speed switching applications.
Finally, the input characteristics of NJV4030PT3G are also very important. The input characteristics include parameters such as bias current, and the gain of the device. The bias current is the current required to turn on the transistor and the gain is what contributes to the amplification. The input characteristics are extremely important for applications such as RF amplifiers and high-speed switching applications, where accuracy and stability are necessary for optimal performance.
Conclusion
The NJV4030PT3G is a high-performance, low-power dual NPN bipolar junction transistor. It is suitable for use in a variety of power amplifiers, analog preamps, and other high-speed switching applications in the RF and baseband stages. Furthermore, its output and input characteristics make it an ideal choice for applications such as RF amplifiers, passive matrix displays, liquid crystal displays, and high-speed operations. The NJV4030PT3G is capable of producing amplification with low noise, low power consumption, and high gain, making it a great choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description