Allicdata Part #: | NJVBDX53C-ND |
Manufacturer Part#: |
NJVBDX53C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 100V 8A TO-220AB |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 8A ... |
DataSheet: | NJVBDX53C Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 12mA, 3A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 3A, 3V |
Power - Max: | 65W |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Base Part Number: | BDX53 |
Description
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Transistors are an essential component in any electronic circuit, serving a variety of functions in digital and analog electronics. One of the most commonly used transistors is the BJT (bipolar junction transistor). It is a three-terminal device comprised of three semiconductor layers: a base, an emitter, and a collector. In this article, we’ll be looking at the NJVBDX53C, a type of BJT single-transistor, and discussing its application field and working principle.The NJVBDX53C is a type of BJT (bipolar junction transistor) that is constructed using a single N-channel MOSFET (metal oxide semiconductor field effect transistor). It is commonly used in low-noise amplifiers, low-noise power amplifiers, and small-signal transistor switching circuits. The NJVBDX53C is manufactured using a low voltage N-channel MOSFET process and features a high impedance, excellent switching characteristics, and a very low noise figure.The NJVBDX53C transistor works by allowing current to flow in one direction through the base, while simultaneously blocking current flow in the opposite direction. When a low voltage is applied to the base of the transistor, the P-channel MOSFET becomes activated, allowing current to flow from the source, through the gate, and into the drain. The current then flows from the drain to the collector, and the transistor is effectively switched on.When the base voltage is pulled high, the NJVBDX53C BJT ensures that no current flows in the opposite direction. This is done by the bias current in the base, also known as the “arrow current”, which blocks current from flowing from the collector to the emitter. The magnitude of the arrow current can be adjusted to control the threshold voltage, which in turn can be used to adjust the gain of the device.The NJVBDX53C is a versatile device that is used in many different types of electronic circuits. It can be used to amplify small-signal inputs, such as audio and radio signals, and to switch loads, such as LEDs and motors. In addition, the device can be used to provide a low-noise interface between digital and analog components.In conclusion, the NJVBDX53C is a single-transistor BJT designed to perform a variety of tasks in low-noise signal processing applications. It is an effective tool for amplifying signals, providing a low-noise connection between digital and analog devices, and for switching loads. With an adjustable gain and threshold voltage, the NJVBDX53C provides enough flexibility to accommodate a wide variety of operations.The specific data is subject to PDF, and the above content is for reference
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