NJW21194G Allicdata Electronics
Allicdata Part #:

NJW21194GOS-ND

Manufacturer Part#:

NJW21194G

Price: $ 2.14
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 250V 16A TO-3P
More Detail: Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Th...
DataSheet: NJW21194G datasheetNJW21194G Datasheet/PDF
Quantity: 1000
1 +: $ 2.14000
10 +: $ 2.07580
100 +: $ 2.03300
1000 +: $ 1.99020
10000 +: $ 1.92600
Stock 1000Can Ship Immediately
$ 2.14
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 16A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8A, 5V
Power - Max: 200W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P-3L
Description

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Application Field and Working Principle of NJW21194G

NJW21194G is a single bipolar junction transistor (BJT) belonging to the NJW21 series. Designed and manufactured by ROHM Semiconductor, this Transistor has user-friendly features such as high breakdown voltage, high current capacity, and wide-range operation temperature, making it suitable for many different applications. In this article, we will cover the working principle, application field of the NJW21194G, as well as its advantages and disadvantages over other single bipolar junction transistors.

Working Principle

A single bipolar junction transistor consists of three layers of doped semiconductor material, separated by two junctions. A BJT consists of two p-n junctions that are connected back to back. NJW21194G works on the principle of making the transistor conduct when the emitter-base junction is forward biased and the collector-base junction is reverse biased. Forward biasing of the emitter-base junction allows electrons to flow from the emitter to the base and holes to flow from the base to the emitter. This causes the base-emitter junction to get ‘turned on’ or activated, allowing electrons from the emitter to flow through it and fill in the holes present in the collector. This process is known as electron injection. Reverse biasing of the collector-base junction isolates the collector from the base, preventing any electron injection from occurring, thus keeping the collector-base junction ‘turned off’ or deactivated.

Advantages

NJW21194G possess various features that provide a great benefit in many different applications. Some of the advantages of the NJW21194G are:

  • High Breakdown Voltage: NJW21194G has a very high breakdown voltage which allows it to handle high voltage signals with ease. This makes it ideal for applications such as high voltage power supplies.
  • High Current Capacity: NJW21194G has a very high current capacity, which allows it to handle high current signals. This makes it ideal for high power applications such as power switching circuits.
  • Wide Temperature Range: NJW21194G has a wide temperature range, which allows it to operate in a wide range of temperatures. This makes it ideal for applications that need to operate in extreme temperatures, such as automotive applications.

Disadvantages

While the NJW21194G provides many advantages, it also has some disadvantages. Some of the disadvantages of the NJW21194G are:

  • Expensive: NJW21194G is one of the most expensive single bipolar junction transistors. This makes it unsuitable for applications that require low cost.
  • Limited Temperature Range: NJW21194G has a limited temperature range. This makes it unsuitable for applications that require high temperature operation.
  • Fragile: NJW21194G is a fragile device and must be handled with care. This makes it unsuitable for applications that require robustness.

Application Field

NJW21194G is mainly used for power switching applications such as high voltage power supplies, motor control, and lighting control circuits. It is also used in audio amplifiers, as a power stage device. The high breakdown voltage, high current capacity, and wide temperature range make it suitable for applications that require robust performance over a wide range of temperatures.

Conclusion

NJW21194G is a single bipolar junction transistor designed and manufactured by ROHM Semiconductor. It has a high breakdown voltage, high current capacity, and wide temperature range, which makes it suitable for many different applications. Its advantages include excellent performance over a wide range of temperatures and its disadvantages include expense and fragility. The main application field of the NJW21194G is for power switching applications as well as audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

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