| Allicdata Part #: | NLVHC1G04DFT2-ND |
| Manufacturer Part#: |
NLVHC1G04DFT2 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | ON Semiconductor |
| Short Description: | IC INVERTER 1CH 1-INP SC88A |
| More Detail: | Inverter IC 1 Channel SC-88A (SC-70-5/SOT-353) |
| DataSheet: |  NLVHC1G04DFT2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Current - Output High, Low: | 2.6mA, 2.6mA |
| Base Part Number: | 74HC1G04 |
| Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
| Supplier Device Package: | SC-88A (SC-70-5/SOT-353) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 125°C |
| Max Propagation Delay @ V, Max CL: | 17ns @ 6V, 50pF |
| Logic Level - High: | 1.5 V ~ 4.2 V |
| Logic Level - Low: | 0.5 V ~ 1.8 V |
| Series: | Automotive, AEC-Q100, 74HC |
| Current - Quiescent (Max): | 1µA |
| Voltage - Supply: | 2 V ~ 6 V |
| Features: | -- |
| Number of Inputs: | 1 |
| Number of Circuits: | 1 |
| Logic Type: | Inverter |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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NLVHC1G04DFT2 is a single-stage, low-voltage, high-current, nanoscale, and p-channel, enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). It was developed by ON Semiconductor, a leading supplier of analog and logic devices. The device is specifically designed for high current applications and has an advanced construction, which allows it to operate at up to 4A. The NLVHC1G04DFT2 has a wide range of applications, including high-power switching, load switch control, and level shifter applications. It is suitable for high-current, high-frequency applications, where a constant supply of current is required. The device also has the capability to operate in a wide temperature range (-40°C to +85°C), making it ideal for harsh environments. The NLVHC1G04DFT2 works on the principle of metal-oxide-semiconductor. The gate and drain electrodes of the device are insulated from the substrate by an oxide layer, which acts as a dielectric. When a voltage is applied to the gate electrode, a charge carriers suddenly conduct through the oxide layer and create an electric field, which allows current to flow through the channel. This process is known as the “Depletion Mode”. In the “Enhancement Mode” of operation, electrons from the source electrode flow to the drain electrode when a voltage is applied to the gate. In this mode, the device can be used as a switch. The gate threshold voltage of the NLVHC1G04DFT2 is usually 0.7 volts, but it can be adjusted depending on the application.The NLVHC1G04DFT2 is a versatile device that can be used in a wide range of applications. It is especially useful in high-frequency applications, where high levels of current are required. Its advanced construction also makes it suitable for harsh environments, and its wide temperature range makes it the ideal solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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