NRVB120LSFT1G Allicdata Electronics
Allicdata Part #:

NRVB120LSFT1G-ND

Manufacturer Part#:

NRVB120LSFT1G

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE SCHOTTKY 20V 1A SOD123
More Detail: Diode Schottky 20V 1A Surface Mount SOD-123
DataSheet: NRVB120LSFT1G datasheetNRVB120LSFT1G Datasheet/PDF
Quantity: 1000
1 +: $ 0.11000
10 +: $ 0.10670
100 +: $ 0.10450
1000 +: $ 0.10230
10000 +: $ 0.09900
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 400µA @ 20V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Base Part Number: MBR120
Description

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The NRVB120LSFT1G is a rectifying diode suitable for high voltage and current applications. It is a high power, single-phase rectifier with a blocking voltage of 120 V and a blocking current of 1 A. It is suitable for a wide range of applications, including power supplies, industrial motors, AC inverters, and high voltage DC/AC converters.

The NRVB120LSFT1G features NTC Zener protection, short-circuit protection, transient overvoltage clamping, a temperature optimized package, and high reliability. The NTC Zener protection is designed to protect the device from overvoltage conditions, while the transient overvoltage clamping prevents voltage spikes from causing damage to other components in the system. The device also features a temperature optimized package, allowing it to operate in high temperature environments without suffering any performance degradation.

The working principle of the NRVB120LSFT1G is based on the P-N junction of a diode. When the device is forward biased, the electrons from the n-type layer travel across the junction to the p-type layer, creating a current flow. In reverse biasing, the electrons from the p-type layer travel across the junction to the n-type layer, creating a high resistance and preventing current flow. This is how the device can be used to rectify AC signals into DC signals.

The NRVB120LSFT1G is suitable for a variety of applications, including the protection of sensitive circuits and equipment, power management, and power control. The device is also ideal for high voltage and current circuits, as the high blocking voltage and blocking current of the device allow large amounts of power to be handled safely. The device is also suitable for use in high temperature environments, as the temperature optimized package allows it to operate without suffering any performance degradation.

The NRVB120LSFT1G is a robust and reliable device and is suitable for a wide range of applications. The high blocking voltage and blocking current of the device makes it suitable for high voltage and current circuits, while the temperature optimized package makes it suitable for high temperature environments. The NTC Zener protection and transient overvoltage clamping provide additional protection from overvoltage conditions, making it ideal for the protection of sensitive circuits and equipment.

The specific data is subject to PDF, and the above content is for reference

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