NRVHP8H200MFDT1G Allicdata Electronics
Allicdata Part #:

NRVHP8H200MFDT1G-ND

Manufacturer Part#:

NRVHP8H200MFDT1G

Price: $ 0.31
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: PUF 4A 200V IN SO-8FL DUA
More Detail: Diode Array 2 Independent Standard 200V 4A Surface...
DataSheet: NRVHP8H200MFDT1G datasheetNRVHP8H200MFDT1G Datasheet/PDF
Quantity: 1000
1500 +: $ 0.27723
Stock 1000Can Ship Immediately
$ 0.31
Specifications
Series: Automotive, AEC-Q101, SWITCHMODE™
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 4A
Voltage - Forward (Vf) (Max) @ If: 910mV @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Description

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Diodes, rectifiers and arrays are among the most important electrical components in any electronic system. Diodes are electronic components with two wires, which allow current to pass in one direction, while preventing it from flowing in the opposite direction. Rectifiers are devices that convert alternating current into constant direct current, while arrays are composed of multiple interconnected diodes. The NRVHP8H200MFDT1G is a diode array specifically designed for high speed switching applications.

This diode array is made up of eight diodes, each of which is capable of carrying a maximum forward current of 200mA. It features high speed switching, with a maximum frequency of 8GHz and a maximum dissipation power of 4.5W. This device is mainly used in applications where switching speed is more important than current carrying capacity, such as switching regulators and high frequency power amplifiers.

The NRVHP8H200MAFDT1G diode array uses a unique structure which allows it to operate smoothly and efficiently at high speeds. It is built using a high performance silicon material, which offers superior heat transfer properties. This array also has built-in protection against reverse currents, as well as thermal and electrostatic protection. The device has a maximum operating temperature of 150°C, making it suitable for a wide range of applications.

The NRVHP8H200MAFDT1G is typically used in a variety of high speed switching applications, such as frequency dividers, voltage multipliers, switching regulators, and high frequency power amplifiers. It is also used in the manufacture of various consumer electronic devices, such as monitor televisions, personal computers, and cellular phones.

The working principle of the NRVHP8H200MAFDT1G is fairly simple. When an alternating current is applied to the device, its diodes begin to alternately conduct in one direction and block in the other. This change in direction of current flow allows the device to convert alternating current into constant direct current. The device is also able to withstand high levels of current, as its diodes are held together by a special interconnecting structure. This structure also improves heat dissipation, which helps to extend the device’s life.

The NRVHP8H200MAFDT1G is a versatile device which has many applications across the consumer electronics industry. It features high speed switching, low power consumption, and an efficient design which makes it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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