NRVSRD620VCTT4RG Allicdata Electronics
Allicdata Part #:

NRVSRD620VCTT4RG-ND

Manufacturer Part#:

NRVSRD620VCTT4RG

Price: $ 0.31
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY GP 200V 3A DPAK
More Detail: Diode Array 1 Pair Common Anode Standard 200V 3A S...
DataSheet: NRVSRD620VCTT4RG datasheetNRVSRD620VCTT4RG Datasheet/PDF
Quantity: 1000
2500 +: $ 0.27505
Stock 1000Can Ship Immediately
$ 0.31
Specifications
Series: SWITCHMODE™
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Operating Temperature - Junction: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MSRD620CT
Description

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Diodes - Rectifiers - Arrays NRVSRD620VCTT4RG application field and working principle

NRVSRD620VCTT4RG is a diode array chip from Vishay Intertechnology. It consists of 8 pieces of fast reverse recovery CoolMOS power diodes that are designed for using in a number of applications, including power conversion, motor control, and load switching circuits. The device is designed to minimize the problems arising from EMI (Electro-Magnetic Interference) due to its fast reverse recovery speed. It provides a low forward voltage drop and low switching losses, making it a suitable choice for power supplies, such as, DC/DC converters, AC/DC converters and active rectifiers.

The main features of the NRVSRD620VCTT4RG device include an operating temperature range of - 55°C to 175°C, a maximum power dissipation rating of 4.5 W, a peak forward current of 30 A, and a maximum reverse recovery time of 1.8 ns. It is also RoHS Compliant and is provided in a unique pin-out configuration optimized for thermal management.

The working principle of NRVSRD620VCTT4RG is based on the behavior of the p-n junction diode. When a positive voltage is applied to the anode of the p-n junction diode, the electrons move from the n-type semiconductor to the p-type semiconductor and thus create a potential difference across the diode. This potential difference, or ‘diode drop’, is usually around 0.7 volts for a silicon-based diode. As a result, current can only flow in one direction and hence the diode works as a rectifier.

The NRVSRD620VCTT4RG device is a highly efficient rectifier that utilizes a special structure to ensure that the reverse recovery time of the device is significantly smaller than the conventional diode rectifiers. This allows it to reduce power losses and improve efficiency while reducing the amount of Electromagnetic Interference (EMI) being generated.

Overall, the NRVSRD620VCTT4RG device is a highly efficient rectifier suitable for a wide range of applications. It provides a low forward voltage drop and low switching losses, making it a suitable choice for power supplies, such as DC/DC converters, AC/DC converters and active rectifiers. Moreover, the device utilizes a special structure to minimize the problems arising from EMI due to its fast reverse recovery speed.

The specific data is subject to PDF, and the above content is for reference

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