NS2029M3T5G Allicdata Electronics
Allicdata Part #:

NS2029M3T5GOSTR-ND

Manufacturer Part#:

NS2029M3T5G

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V 0.1A SOT-723
More Detail: Bipolar (BJT) Transistor PNP 50V 100mA 140MHz 265m...
DataSheet: NS2029M3T5G datasheetNS2029M3T5G Datasheet/PDF
Quantity: 8000
1 +: $ 0.03000
10 +: $ 0.02910
100 +: $ 0.02850
1000 +: $ 0.02790
10000 +: $ 0.02700
Stock 8000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 265mW
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723
Description

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The NS2029M3T5G Transistor is a single bipolar junction transistor (BJT) that is used in various applications. It is a 3Amp, 200V, NPN transistor with an isolation voltage of 5V.

The NS2029M3T5G transistor is used in a variety of applications, ranging from switching to signal amplification. It can be used as a high-speed switch, as an amplifier, as a high-speed amplifier, as a current source, and as a voltage source.

The primary advantage of the NS2029M3T5G transistor is its flexibility and versatility. It is suitable for a wide variety of applications and can be easily adapted to specific needs. It has a wide operating range, from its low current level of 5mA to its maximum current of 3A.

The NS2029M3T5G transistor can be used as a low-power switch, as an amplifier, as a voltage source, and as a current source. It can also be used as an isolator, as an audio amplifier, and as a load switch. Its low-noise characteristics make it suitable for use in audio amplifiers and switching applications.

The working principle of the NS2029M3T5G transistor is based on the principle of electron transport. An electrostatic force is created when electrons are injected into the transistor’s N-type emitter. This force attracts further electrons, and they flow through the collector-base junction and then out of the device. The current through the circuit is determined by the charge of the electrons and the resistance of the transistor.

The NS2029M3T5G transistor works in similar fashion to other BJTs. The base-emitter junction is reverse-biased and the collector-base junction is forward-biased. When a positive voltage is applied to the base of the transistor, electrons are injected into the base and the collector-base junction is forward-biased. This allows the transistor to conduct. The current flow through the transistor is proportional to the base current and the collector current is proportional to the collector-base voltage.

For most switching applications, the NS2029M3T5G transistor can be used to provide a high-speed switching action. It can also be used as a current source or as a voltage source. Its low-noise characteristics make it suitable for use in audio amplifiers and switching applications. Additionally, it is useful for applications such as logic gates and protection circuits.

The NS2029M3T5G transistor is a versatile device that is suitable for a wide range of applications. It has a wide operating range and its low-noise characteristics make it suitable for use in audio amplifiers and switching applications. It can be used as a high-speed switch, as an amplifier, as a voltage source, and as a current source.

The specific data is subject to PDF, and the above content is for reference

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