NS6A5.0AFT3G Circuit Protection

The NS6A5.0AFT3G is a member of the TVS - Diodes family. It is an ultra-low capacitance diode used for ESD protection, and its working principle is based on the principle of an avalanche breakdown diode.

The diode is designed to provide low capacitance, high accuracy and ultra-low insertion loss for high-speed signal lines. The device is rated for a high junction current and a wide temperature range, ideal for high-speed data line and antenna port ESD protection.

The diode has a strong negative threshold voltage and low reverse leakage current, making it an excellent choice for ESD protection of data lines. The device also has a low capacitance, which helps eliminate the possibility of signal distortion.

The device is also ideal for applications requiring a high degree of immunity to Electrostatic Discharge (ESD), such as communication systems, digital cameras, and other sensitive electronic systems. It is also ideal for use in Multi-Level Cell Flash Memory Data Lines. It provides protection against high voltage ESD pulses of up to 50kV.

The working principle of the NS6A5.0AFT3G is based on the principle of an avalanche breakdown diode, which allows current to flow through it when a certain voltage applies. The internal structure of the diode is divided into two parts: an intrinsic region and a drift region.

The intrinsic region is very thin and is located between the anode and the cathode. This layer is kept very thin to allow the current to flow, while the adjacent drift region is thicker and has a wider bandgap. When the voltage applied to the diode is greater than the breakdown voltage of the drift region, a large amount of current is quickly drawn. This current is also called an avalanche. Hot electrons move through the drift region, creating a large current in the short time.

The device provides a high level of protection and excellent performance against ESD events. The low capacitance nature of the device ensures low signal distortion, allowing signals to travel faster. The low junction temperature of the device also adds to its protection capability, providing continuous protection against ESD, while the wide operational temperature range increases the reliability of the device.

The NS6A5.0AFT3G is an excellent choice for ESD protection of high speed data lines and antenna ports, and is especially suitable for applications requiring a high degree of immunity to ESD. Its low capacitance makes it an ideal choice for applications where signal distortion must be minimized.

NS6A13AT3G	Littelfuse I...	0.0 $	1000	TVS DIODE 13V 21.5V SMA
NS6A12AT3G	Littelfuse I...	0.0 $	1000	TVS DIODE 12V 31V SMA
NS6A12AFT3G	Littelfuse I...	0.0 $	1000	TVS DIODE 12V 19.9V SMA-F...
NS6A13AFT3G	Littelfuse I...	0.0 $	1000	TVS DIODE 13V 21.5V SMA-F...
NS6A5.0AFT3G	Littelfuse I...	0.0 $	1000	TVS DIODE 5V 9.2V SMA-FL
NS6A13AT3H	Littelfuse I...	0.0 $	1000	TVS DIODE 13VWM SMA
NS6A15AFT3G	Littelfuse I...	0.0 $	1000	TVS DIODE 15V 24.4V SMA-F...
NS6A24AFT3G	Littelfuse I...	0.0 $	1000	TVS DIODE 24V 38.9V SMA-F...
NS6A28AFT3G	Littelfuse I...	0.0 $	1000	TVS DIODE 28V 45.4V SMA-F...
NS6A30AFT3G	Littelfuse I...	0.0 $	1000	TVS DIODE 30V 48.4V SMA-F...
NS6A33AFT3G	Littelfuse I...	0.0 $	1000	TVS DIODE 33V 53.3V SMA-F...
NS6A36AFT3G	Littelfuse I...	0.0 $	1000	TVS DIODE 36V 58.1V SMA-F...
NS6A64AFT3G	Littelfuse I...	0.0 $	1000	TVS DIODE 64V 103V SMA-FL
NS6A5.0AT3H	Littelfuse I...	0.0 $	1000	TVS DIODE 5VWM SMA
NS6A5.0AT3G	Littelfuse I...	0.0 $	1000	TVS DIODE 5V 9.2V SMA