Allicdata Part #: | NS8DTHE3_A/P-ND |
Manufacturer Part#: |
NS8DTHE3_A/P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 8A TO220AC |
More Detail: | Diode Standard 200V 8A Through Hole TO-220AC |
DataSheet: | NS8DTHE3_A/P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 8A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 55pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
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A single rectifier diode is one of the most basic components in electronics. With its use, electrical power is converted from alternating current (AC) to direct current (DC). It functions as a one-way valve for current, allowing current to pass in one direction and blocking in the opposite direction. The NS8DTHE3-A/P diode is a particular type of single rectifier and is designed for use in high-power, high-speed and high efficient switching applications.
NS8DTHE3-A/P rectifier diodes feature low forward voltage drop, minimum switching losses and a low-profile package. The package also includes a construction that is tailored for durability and lightweight use. It has a low thermal resistance, allowing it to quickly heat up and cool down when switching applications and can handle high temperatures at up to 175C.
The operating characteristics of the NS8DTHE3-A/P rectifier diode make it suitable for use in a wide variety of applications. It is commonly used in switching power supplies, welding machines, power control circuits, electric vehicle chargers and DC-DC converters. In these applications, its higher efficiency, lower forward voltage drop and low thermal resistance make it a popular choice for increasing efficiency and reliability.
The working principle of the NS8DTHE3-A/P rectifier diode is based on the internal junction field effect transistor (JFET). This type of diode utilizes a voltage applied across the internal junction to cause an electric field, which causes the conduction of current in one direction, while blocking it in the opposite direction. When there is no electric field, the diode will not conduct any current.
The forward voltage drop of the diode occurs when current is passed through it in the forward direction. It is the voltage across the diode when its internal electric field is created. This voltage is typically very small, usually around 0.3V. It can also be minimized by using a lower current.
The switching losses occur when the NS8DTHE3-A/P diode is switched from forward to reverse direction. These losses are directly related to the voltage applied to the diode, and it is important to ensure that the correct voltage is used. The switching time of the diode is also important and depends on the circuit design.
The NS8DTHE3-A/P rectifier diode is a versatile component that can be used in a variety of applications. It has a low forward voltage drop, low switching losses and low thermal resistance, making it a great choice for use in high-power, high-speed and high efficient switching applications. With its use, electrical power can be converted from alternating current (AC) to direct current (DC).
The specific data is subject to PDF, and the above content is for reference
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