NSM80100MT1G Allicdata Electronics
Allicdata Part #:

NSM80100MT1G-ND

Manufacturer Part#:

NSM80100MT1G

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 80V 0.5A SC-74-6
More Detail: Bipolar (BJT) Transistor PNP 80V 500mA 150MHz 270m...
DataSheet: NSM80100MT1G datasheetNSM80100MT1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.08404
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Power - Max: 270mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SC-74
Description

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NSM80100MT1G is a device belonging to a class of transistors called bipolar junction transistors (BJTs). It is a single BJT, known as a small signal transistor, used for amplifying, switching and rejecting signals. BJTs are current-controlled semiconductor devices that are composed of a pnp or npn layer ofthe semiconductor material. At the extremes, these materials are either positively charged (n-type) or negatively charged (p-type), providing a series of current paths through the device.

NSM80100MT1G has a wide range of uses, from amplifying and switching low-power signals to controlling a wide range of high-power circuits. Because BJTs are extremely versatile, they are used in a variety of electronic circuits, including signal processing, amplifiers and RF communication.

The working principle of a BJT is based on the three terminals of the transistor. Current flows through the device due to the difference between the Base and Emitter voltages. The base voltage is typically lower than the emitter, so electrons are drawn from the emitter to the base, creating a current at the base, which is called the Base or Collector current. This current then flows through the Collector and out of the transistor, creating a current at the Collector junction.

The main application areas of NSM80100MT1G are small signal amplifiers, switching regulator and high-frequency devices. It is used in many applications such as pre-amplifiers, low power amplifiers, audio amplifiers, bias circuits, and voltage regulators. The device can also be used in the high frequency applications such as televisions, radio receivers, and home theater systems. Its high frequency properties make it ideal for such applications.

In conclusion, NSM80100MT1G is a versatile BJT with a wide range of uses in a variety of applications. The device is capable of amplifying and switching low-power signals and can be used in either DC or high-frequency applications. Its ease of use and wide range of applications make it a popular choice for engineers, making it a great choice for those looking for reliable BJTs for their projects.

The specific data is subject to PDF, and the above content is for reference

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