NSP4201MR6T1G Circuit Protection

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Transient Voltage Suppressor (TVS) diodes, also called surge suppressions diodes, are protective components installed on integrated circuits, to protect sensitive equipment from electrical overstress (EOS), such as Electro-Static Discharge (ESD) or lightning.

NSP4201MR6T1G, manufactured by ON Semiconductor, is a unidirectional surface-mount diode specifically designed for high-current, high-reliability protection applications. This model is part of the Automotive SOT23 E-Series, that provides ultra-low leakage and high temperature performance for today’s automotive applications.

NSP4201MR6T1G protection diodes have a dual-channel bidirectional low capacitance array, in a miniature (SOT23) plastic package, allowing for a wide variety of applications and providing superior performance. This model features a well-designed guard-ring construction for best protection, and is capable of handling 5+ Amps of peak pulse current. It also has a low 5V, 6V and 6.5V working voltages, and a working temperature range of -55°C to +150°C. This all ensures a reliable protection and operation over a vast array of situations and conditions.

Application Field

NSP4201MR6T1G E-Series TVS diodes are ideal for automotive applications requiring superior ESD or EOS protection, such as in electronic control units, in car entertainment and communication systems, engine control systems, airbag systems, ABS and advanced driver assistance systems. These diodes are also suitable for high voltage applications, such as LCD TVs, server systems, IT equipment, or telecom systems.

Working Principle

TVS diodes are built based on the principle of avalanche breakdown. Their operation is highly dependent on the generated electric field, since electrons can accelerate and reach a much higher speed, causing the collision of electrons with the lattice covalent bonds of the material, forming an avalanche breakdown. One of the main properties of this technology is its ability to keep the diodes’ junction voltage constant, regardless of the current that is passing through it, while maintaining a low leakage current.

The NSP4201MR6T1G TVS diode is designed for 4-line ESD, to ensure a superior level of protection, and has five rating parameters, including the breakdown voltage (VBR), the clamping voltage (VCL), the following current (IF max), the peak-pulse power (PPM) and the maximum let-thru energy (Ipp/T). The diodes are triggered by the voltage value at which they become conducting, which is known as the avalanche voltage, and the avalanche current the voltage must exceed for the avalanche breakdown process to happen.

In practical applications, when the input voltage reaches the breakdown voltage (VBR), the device will release energy by clamping the voltage and absorb large amounts of peak current, until it is discharged. This VBR and VCL values should depend on the environment and the nature of the application, in order to provide an adequate level of protection. Then, the ESD diode will protect the application from EOS events, such as ESD pulses, by limiting the voltage and the amount of energy being transmitted.

Conclusion

NSP4201MR6T1G from ON Semiconductor are reliable TVS diode components, ideal for automotive and high-voltage application requiring superior performance, due to their low voltage, high current characteristics. With its ultra-low leakage and high temperature capabilities, this model offers an effective solution for protection against EOS events, such as ESD and lightning.

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