NSR1020MW2T3G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	20V
Current - Average Rectified (Io):	1A (DC)
Voltage - Forward (Vf) (Max) @ If:	540mV @ 1A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	40µA @ 15V
Capacitance @ Vr, F:	29pF @ 5V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	SC-76, SOD-323
Supplier Device Package:	SOD-323
Operating Temperature - Junction:	125°C (Max)
Base Part Number:	NSR1020

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NSR1020MW2T3G Application Field and Working Principle

Introduction:

NSR1020MW2T3G is an ultra-fast diode specifically designed for high-frequency rectifying applications. These ultra fast recovery diodes provide excellent performance solutions for various levels of power switching operations. NSR1020MW2T3G is housed in SMA packages, making them suitable for high density applications where small size is of utmost importance. The devices have a very low forward voltage drop, thus minimizing power dissipation, and due to their ultra-fast recovery time they help to reduce or eliminate high EMI radiation generated in the frequency ranges.

Application Field:

NSR1020MW2T3G is mostly used in power switching operations, power supplies, automotive power electronics, thrusters and DC-DC converters, solid state relays, load switch devices, and RF power modules.NSR1020MW2T3G ultra-fast Recovery diodes are also used in medical equipment, such as X-Ray machines, CT scanners, and so on. Moreover, these devices are suitable for applications such as fluorescent lighting, AC/AD Converters, Solar Cell Inverters, Industrial Inverters, High Frequency Smart Meters, and MEMS based systems.

Working Principle:

NSR1020MW2T3G ultra-fast recovery diodes are designed to provide high-frequency rectifying solutions at high operating frequencies. In operation, NSR1020MW2T3G recovers from its conducting to its non-conducting state much faster than conventional recovery diodes do. At high switching frequency in power supplies application, these devices reduce or eliminate high EMI radiation, which can cause interference with other devices in the application circuit. These devices also reduce power dissipation due to ultra-fast reverse recovery time and low forward voltage drop. The NSR1020MW2T3G also has a high surge current capability in order to provide surge protection from unwanted switching operations. The low forward voltage drop allows them to be used in applications such as solar cell inverters and RF amplifiers, where high efficiency is required.

Conclusion:

NSR1020MW2T3G is an ultra-fast recovery diode used in various levels of power switching operations. Its ultra-fast recovery time helps to reduce or eliminate high EMI radiation and reduces power dissipation due to low forward voltage drop. These devices are suitable for applications such as power supplies, RF power modules, fluorescent lighting, medical equipment, and high frequency smart meters. The high surge current capability of these devices adds additional protection in the application circuit.

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