NST45010MW6T1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 PNP (Dual) Matched Pair
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	220 @ 2mA, 5V
Power - Max:	380mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363
Base Part Number:	NST45010M

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NST45010MW6T1G - Transistors - Bipolar (BJT) - Arrays

The NST45010MW6T1G is a high voltage array transistor from IXYS Integrated Circuit Division. It is comprised of eight individually-controlled transistors organized into an array, allowing for greater control and efficiency when addressing a load. It is well-suited for a variety of load applications, including those related to industrial, consumer, and automotive electronics. This article will explore the application field and working principle of the NST45010MW6T1G.The NST45010MW6T1G is a highly versatile and powerful device. It is built with a voltage rating of 45V and a maximum current of 10A. The device offers owners a choice of four discrete base-to-emitter voltage levels: 28V, 44V, 60V, and 76V. This flexibility enables it to be used in a wide range of high-voltage applications.Aside from its physical characteristics, the NST45010MW6T1G also offers a variety of technical benefits. For instance, it is designed with low leakage current, which provides greater reliability and better performance over long periods of time. It is also capable of operating in temperatures ranging from -55C to +175. In addition, The NST45010MW6T1G is designed with low switch on and switch off times, making it ideal for high-frequency switching applications. The NST45010MW6T1G is a tried and true device with many years of successful use. It is a great option for applications that require reliable high-voltage outputs with low current draw. It is also suitable for use in power management circuits and power sequencing applications. In addition, the device is capable of handling pulsed loads, making it a great choice for video and audio production.The NST45010MW6T1G utilizes a base- and emitter-controlled circuit arrangement. This type of circuit arrangement allows for greater control over the electrical current and voltage, as the current flow is regulated by controlling the voltage and/or current applied to the base-to-emitter junction. This arrangement also allows for faster switching operations and higher voltage rating than traditional bipolar junction transistor (BJT).The NST45010MW6T1G is a great choice for those looking for a reliable and robust high-voltage array device. Its wide variety of voltage and current ratings, versatile switching capabilities, and impressive temperature range all make it suitable for numerous high volume, low power, and pulsed-load applications. Its discrete control also provides greater efficiency and reliability for anyone dealing with industrial and consumer electronics.

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