NST65011MW6T1G Allicdata Electronics

NST65011MW6T1G Discrete Semiconductor Products

Allicdata Part #:

NST65011MW6T1GOSTR-ND

Manufacturer Part#:

NST65011MW6T1G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN 65V 0.1A SC88-6
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 10...
DataSheet: NST65011MW6T1G datasheetNST65011MW6T1G Datasheet/PDF
Quantity: 6000
3000 +: $ 0.05292
6000 +: $ 0.04763
15000 +: $ 0.04234
30000 +: $ 0.03969
75000 +: $ 0.03528
Stock 6000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 380mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88 (SOT-363)
Description

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NST65011MW6T1G is an ESD Protected 10-Line low capacitive I/O Array a Transistor Array. This product is designed to provide an array of data-interfaces, used in communication applications and embedded systems.

NST65011MW6T1G has a wide range of applications. It is suitable for use in industrial equipment such as robots and automated machinery, embedded applications such as medical and instrumentation equipment, automotive systems, or any application where high performance and low power consumption is required.

The device is constructed with a five-line I/O configuration, with four additional enhanced control lines. It has a unique architecture that enables a low-capacitance bus interface and high speed switching capability. It also has ESD protection and level tolerant pins, reducing noise susceptibility and providing improved reliability.

NST65011MW6T1G is ideal for applications requiring high speed data transmission, due to its low capacitive I/O array. It can transmit and receive data in one clock cycle and its differential outputs enable better noise immunity when compared to single-ended outputs. It also features a high current drive capability, making it suitable for interfacing with motors, FPGAs and other digital ICs. Additionally, it has a wide temperature range, allowing it to operate reliably in various environmental conditions.

The working principle of NST65011MW6T1G is based on bipolar junction transistors (BJTs). BJTs are three-terminal devices that facilitate the flow of current from one terminal to the other. In NST65011MW6T1G, the three terminals consist of the collector, the base and the emitter. The base of the transistor allows current to flow from the collector to the emitter, depending on the voltage level applied to it. This principle can be used to control the voltage levels at the output of the device, in order to achieve distinct output levels.

NST65011MW6T1G provides a cost effective, low capacitive I/O array that is suitable for a wide range of applications. It has a wide range of features, such as differential outputs, high current drive capability and ESD protection. It has a unique architecture that enables high speed switching and low power consumption. Plus, it is constructed with BJTs, allowing easy control of output voltage.

The specific data is subject to PDF, and the above content is for reference

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