NUP3112UPMUTAG Circuit Protection |
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Allicdata Part #: | NUP3112UPMUTAG-ND |
Manufacturer Part#: |
NUP3112UPMUTAG |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | ON Semiconductor |
Short Description: | TVS DIODE 4V 6UDFN |
More Detail: | N/A |
DataSheet: | NUP3112UPMUTAG Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Unidirectional Channels: | 3 |
Voltage - Reverse Standoff (Typ): | 4V (Max) |
Voltage - Breakdown (Min): | 5.2V |
Voltage - Clamping (Max) @ Ipp: | -- |
Current - Peak Pulse (10/1000µs): | -- |
Power - Peak Pulse: | -- |
Power Line Protection: | Yes |
Applications: | General Purpose |
Capacitance @ Frequency: | 0.7pF @ 1MHz |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UFDFN Exposed Pad |
Supplier Device Package: | 6-UDFN (1.6x1.6) |
Base Part Number: | NUP3112 |
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TVS (Transient Voltage Suppressor) - Diodes are a type of semiconductor devices used for protecting circuits from suddenly generated high voltage spikes. The NUP3112UPMUTAG (ULP Mosfet ToughGuard) is an integrated ultra low power MOSFET protection solution specifically designed for portable hand held electronic equipment. It provides efficient and reliable protection against electrostatic discharge (ESD), electrostatic overvoltage (ESO) and other overvoltage fault conditions.
The NUP3112UPMUTAG is a patented chip-on-board assembly of an ESD diode with integrated MOSFET and protective resistors. It enables inrush current protection and provides a high degree of overvoltage protection due to low capacitance. The device is designed for a wide range of applications including hand held portable equipment, laptop computers, PC peripherals, cell phones, GPS receivers, digital cameras, CD/DVD players, and other consumer electronic products.
The working principle of the NUP3112UPMUTAG is based on a dual-stage ESD clamp structure. In the low voltage stage, a diode clamps the voltage transient to the drain-source breakdown voltage of the MOSFET that can be pre-programmed for different levels of protection. In the high voltage stage, two resistors are connected in series to limit the voltage excursion and reduce the peak curvature of the ESD pulse.
The NUP3112UPMUTAG has several advantages over other ESD protection devices. It provides a low standby current and fast switching speed. The ultra low power design reduces the total power consumption of the device. It also has an adjustable overvoltage protection limit that allows for precise levels of protection to be applied to a wide range of applications. Plus, it has a unique “one-size-fits-all” packaging approach, which provides a reduced total cost of ownership compared to discrete ESD protection components.
The NUP3112UPMUTAG is an ideal solution for protecting electronic equipment from overvoltage events, such as ESD, electrostatic overvoltage, EMI/RFI, and transients. With its unique design features, it provides consistent protection to a wide range of applications while achieving reduced power consumption and total cost of ownership. This makes the NUP3112UPMUTAG an ideal choice for protecting modern portable electronics.
The specific data is subject to PDF, and the above content is for reference
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