NUS3045MNT1G Allicdata Electronics

NUS3045MNT1G Circuit Protection

Allicdata Part #:

NUS3045MNT1GOSTR-ND

Manufacturer Part#:

NUS3045MNT1G

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: ON Semiconductor
Short Description: IC OVP W/30V P-CH MOSFET DFN8
More Detail: N/A
DataSheet: NUS3045MNT1G datasheetNUS3045MNT1G Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
Voltage - Clamping: 7.08V
Technology: Mixed Technology
Number of Circuits: 1
Applications: General Purpose
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Description

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The NUS3045MNT1G TVS diode is a three-electrode device designed to improve the protection of vulnerable systems from transient overvoltage or electrostatic discharge (ESD) events. It is a mixed-technology device that combines the surge protection of a transient voltage suppressor device with the reverse leakage of a Zener diode. This combination makes the NUS3045MNT1G TVS diode highly attractive for use in high reliability, sensitive, and low impedance circuits.

The NUS3045MNT1G TVS diode can be used in a variety of applications including telecommunications equipment (voice, data, and video); computer systems; medical electronics equipment; aerospace and defense systems; automotive, consumer and industrial equipment. The NUS3045MNT1G TVS diode is designed to provide excellent protection in applications which require high reliability and require low clamping voltage, such as those used in sensitive systems. The device is designed to reduce the voltage during surge events, thus providing protection from damage due to electrostatic discharge or power surges.

The NUS3045MNT1G TVS diode\'s primary areas of operation are in the area of transient voltage suppression (TVS), Zener protection, and reverse leakage. The three-electrode device is designed to provide a high degree of protection against transient overvoltage and electrostatic discharge (ESD) events. The device works by providing a low clamping voltage in the presence of a high surge current or ESD strike. The device offers an open-circuit breakdown voltage of 30 V, a maximum surge current of 5 A, and a leakage current of 1.5 μA. The device also has a very low clamping voltage of 7.6 V at 9 A, making it highly attractive for applications in sensitive and low impedance circuits.

The NUS3045MNT1G TVS diode is designed to provide excellent protection and performance in a wide variety of applications. The device offers a low maximum surge current, a low leakage current, and a wide operating temperature range. In addition, the device offers fast response time and low voltage clamping, making it an ideal solution for sensitive circuits and high reliability systems. The device is also available in a surface mount package making it suitable for use in PC boards and other space-constrained designs.

The NUS3045MNT1G TVS diode is one of the most versatile and reliable TVS devices for use in a wide variety of applications. The device\'s ability to provide protection from both transient overvoltage events and electrostatic discharge makes it highly attractive for use in high reliability, sensitive, and low impedance circuits. The device also offers low clamping voltages and a wide operating temperature range, making it ideally suited for use in a variety of challenging applications. The NUS3045MNT1G TVS diode also has a small footprint, making it ideal for use in PC boards and other space-constrained designs.

The specific data is subject to PDF, and the above content is for reference

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