NUS5530MNR2G Allicdata Electronics
Allicdata Part #:

NUS5530MNR2GOSTR-ND

Manufacturer Part#:

NUS5530MNR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IC MOSFET W/PNP SW TRANS 8-DFN
More Detail: Transistor General Purpose NPN, P-Channel 35V PNP,...
DataSheet: NUS5530MNR2G datasheetNUS5530MNR2G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, P-Channel
Applications: General Purpose
Voltage - Rated: 35V PNP, 20V P-Channel
Current Rating: 2A PNP, 3.9A P-Channel
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Base Part Number: NUS5530MN
Description

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  1. Introduction
    The NUS5530MNR2G is a special purpose transistor manufactured and sold by Toshiba, built to originate high power and provide long-term reliability. It is designed as a step-down driver that can be used to control the voltage or current in a circuit, as either a fast-switching on and off or for continuous output. It is widely used in various applications such as LED lighting, power supply, and power converters.

  2. Type of Transistor
    The NUS5530MNR2G is a type of N Mosfet transistor, specially designed for Power Inverter and Power Supply control applications. It is a "low-side" dry-break type MOSFET, with a built-in reverse diode and internal conductivity schottky diode. Built with both high power capability and long-term reliability, it supports up to 70A continuous current and over 100A peak current. It also offers low ON resistance RON (less than 12 mΩ for 2 Vgs at 2A) and low-voltage operations.

  3. Features and Specifications
    The NUS5530MNR2G offers several features, such as:
    • Supports up to 70A continuous current, over 100A peak current
    • Operating voltage – 10V to 30V
    • Low RDS(ON) – less than 12 mΩ for 2 Vgs at 2A
    • Low voltage operation – 2S gate threshold
    • Built-in reverse diode and conductive schottky diode
    • Low ON resistance and high energy efficiency
    • High temperature stability under -40°C to 150°C

  4. Application Field and Working Principle
    The NUS5530MNR2G is widely used in various applications that require high power as well as long-term reliability. Its low ON resistance, low voltage operation, and reverse diode protection make it well suited for LED lighting, power supplies, and power converters.In terms of working principle, the NUS5530MNR2G utilizes the “FET” structure. It works by controlling the voltage or current in the circuit with MOSFET, which is capable of fast switching on and off. The NUS5530MNR2G has a built-in reverse diode and conductive schottky diode that ensure the MOSFET remains off and the circuit is protected from damage in case of accidental overvoltage.

  5. Conclusion
    The NUS5530MNR2G is a special purpose transistor manufactured and sold by Toshiba for powering various applications such as LED lighting, power supply, and power converters. It is a type of N Mosfet transistor with a built-in reverse diode and internal conductivity schottky diode. It offers features such as up to 70A continuous current, over 100A peak current, low ON resistance, and low voltage operations. Moreover, it works by controlling the voltage or current in the circuit with MOSFET, controlling the gate terminal, and thus, providing high power and long-term reliability.

The specific data is subject to PDF, and the above content is for reference

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