Allicdata Part #: | 1727-1278-2-ND |
Manufacturer Part#: |
NX3008CBKS,115 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N/P-CH 30V 6TSSOP |
More Detail: | Mosfet Array N and P-Channel 30V 350mA, 200mA 445m... |
DataSheet: | NX3008CBKS,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06260 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 350mA, 200mA |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 350mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.68nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 15V |
Power - Max: | 445mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | 6-TSSOP |
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NX3008CBKS,115 is a high-speed, high-performance transistor array. It belongs to the product family of Transistors - FETs, MOSFETs - Arrays. This transistor array consists of 8 independent N-channel power MOSFETs and comes in a TO-220AB package. Its features include low drain-source resistance, low gate threshold voltage, improved maximum drain current, extended output current range and improved avalanche characteristics.
NX3008CBKS,115 has various applications, ranging from power management and lighting to robotics, industrial control and automotive electronics. It can be used in a variety of devices and systems, such as power amplifiers, power switches, high-voltage DC-DC converters, motor control, lighting control and many more. In addition to this, this transistor array can also be used in power supplies, such as smps, cps, ac-dc and dc-dc, to regulate the voltage and current of a power circuit.
The working principle of NX3008CBKS,115 is based on the N-channel MOSFET transistors. This type of transistor utilizes an insulated gate electrode to control the width of a conductive channel between a source and a drain, enabling the transistor to be used for multiple applications. The gate voltage of the transistor is controlled by a gate driver circuit, which is typically powered by a voltage supply. By controlling the gate voltage of the transistor, the current flowing through the transistor can be controlled, allowing it to be used for a variety of functions.
NX3008CBKS,115 can be used in a variety of circuits and applications due to its wide range of advantages. It offers superior resistive switching with low Rdson and low voltage ramp. Furthermore, it has low gate charge and operating temperature as well as low Vce(sat), making it an ideal choice for various power control and management applications. Additionally, it contains a high-speed recovery time, wide current handling capacity and improved avalanche characteristics.
NX3008CBKS,115 is a high-performance transistor array with a variety of operating specifications and features. It is suitable for a wide range of power management and lighting applications, from smps and cps to ac-dc and dc-dc, as well as many other industrial and automotive electronic applications. The N-channel MOSFET transistors used in this transistor array allow it to offer unmatched performance, making it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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